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K7P401811A-HC30T PDF预览

K7P401811A-HC30T

更新时间: 2024-11-14 20:58:51
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
13页 294K
描述
Late-Write SRAM, 256KX18, 1.8ns, CMOS, PBGA119

K7P401811A-HC30T 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:BGA, BGA119,7X17,50Reach Compliance Code:compliant
风险等级:5.88最长访问时间:1.8 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B119
内存密度:4718592 bit内存集成电路类型:LATE-WRITE SRAM
内存宽度:18端子数量:119
字数:262144 words字数代码:256000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX18
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装等效代码:BGA119,7X17,50
封装形状:RECTANGULAR封装形式:GRID ARRAY
并行/串行:PARALLEL电源:1.5,3.3 V
认证状态:Not Qualified最大待机电流:0.06 A
最小待机电流:3.15 V子类别:SRAMs
最大压摆率:0.6 mA表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:BALL端子节距:1.27 mm
端子位置:BOTTOMBase Number Matches:1

K7P401811A-HC30T 数据手册

 浏览型号K7P401811A-HC30T的Datasheet PDF文件第2页浏览型号K7P401811A-HC30T的Datasheet PDF文件第3页浏览型号K7P401811A-HC30T的Datasheet PDF文件第4页浏览型号K7P401811A-HC30T的Datasheet PDF文件第5页浏览型号K7P401811A-HC30T的Datasheet PDF文件第6页浏览型号K7P401811A-HC30T的Datasheet PDF文件第7页 
K7P403611A  
K7P401811A  
128Kx36 & 256Kx18 SRAM  
Document Title  
128Kx36 & 256Kx18 Synchronous Pipelined SRAM  
Revision History  
Draft Date  
Remark  
Rev.No.  
History  
Mar. 1999  
Nov. 1999  
Preliminary  
Final  
0.0  
1.0  
- Preliminary specification release  
- Final specification release  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters  
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.  
Rev 1.0  
Nov. 1999  
- 1 -  

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