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K7P401822M-H16 PDF预览

K7P401822M-H16

更新时间: 2024-11-10 22:10:55
品牌 Logo 应用领域
三星 - SAMSUNG 内存集成电路静态存储器
页数 文件大小 规格书
12页 242K
描述
128Kx36 & 256Kx18 Synchronous Pipelined SRAM

K7P401822M-H16 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:BGA, BGA119,7X17,50
针数:119Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92Is Samacsys:N
最长访问时间:3 ns其他特性:ALSO REQUIRES 2.5V I/O SUPPLY
I/O 类型:COMMONJESD-30 代码:R-PBGA-B119
JESD-609代码:e0长度:22 mm
内存密度:4718592 bit内存集成电路类型:STANDARD SRAM
内存宽度:18功能数量:1
端子数量:119字数:262144 words
字数代码:256000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:256KX18输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装等效代码:BGA119,7X17,50封装形状:RECTANGULAR
封装形式:GRID ARRAY并行/串行:PARALLEL
电源:2.5,3.3 V认证状态:Not Qualified
最大待机电流:0.06 A最小待机电流:3.15 V
子类别:SRAMs最大压摆率:0.55 mA
最大供电电压 (Vsup):3.45 V最小供电电压 (Vsup):3.15 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:1.27 mm端子位置:BOTTOM
宽度:14 mmBase Number Matches:1

K7P401822M-H16 数据手册

 浏览型号K7P401822M-H16的Datasheet PDF文件第2页浏览型号K7P401822M-H16的Datasheet PDF文件第3页浏览型号K7P401822M-H16的Datasheet PDF文件第4页浏览型号K7P401822M-H16的Datasheet PDF文件第5页浏览型号K7P401822M-H16的Datasheet PDF文件第6页浏览型号K7P401822M-H16的Datasheet PDF文件第7页 
K7P403622M  
K7P401822M  
128Kx36 & 256Kx18 SRAM  
Document Title  
128Kx36 & 256Kx18 Synchronous Pipelined SRAM  
Revision History  
Draft Date  
Remark  
Rev. No.  
Rev. 0.0  
Rev. 0.1  
History  
Preliminary  
Preliminary  
- Preliminary specification release  
- Change specification format.  
No change was made in parameters.  
April, 1997  
Jan. 1998  
Preliminary  
Final  
- Updated IDD, ISB and Input High Level.  
Updated tKHKL, tKLKH, tKHQX, tKHQX1 and AC Test Conditions.  
For JTAG, updated Vendor Definition and added tSVCH/tCHSX.  
Rev. 0.2  
Rev. 1.0  
- Final specification release  
Dec. 1998  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.  
Dec. 1998  
- 1 -  
Rev 1.0  

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