型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K7P323666M-HC250 | SAMSUNG |
获取价格 |
Late-Write SRAM, 1MX36, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 | |
K7P323674C | SAMSUNG |
获取价格 |
1Mx36 & 2Mx18 SRAM | |
K7P323674C-GC250 | SAMSUNG |
获取价格 |
Late-Write SRAM, 1MX36, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, BGA | |
K7P323674C-HC250 | SAMSUNG |
获取价格 |
Late-Write SRAM, 1MX36, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 | |
K7P323674C-HC300 | SAMSUNG |
获取价格 |
Late-Write SRAM, 1MX36, 1.6ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 | |
K7P323688M-GC25 | SAMSUNG |
获取价格 |
SRAM | |
K7P323688M-GC250 | SAMSUNG |
获取价格 |
Late-Write SRAM, 1MX36, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, BGA | |
K7P323688M-GC30 | SAMSUNG |
获取价格 |
SRAM | |
K7P323688M-GC300 | SAMSUNG |
获取价格 |
Late-Write SRAM, 1MX36, 1.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, B | |
K7P323688M-HC25 | SAMSUNG |
获取价格 |
SRAM |