Datasheet > K7P323688M-HC30

K7P323688M-HC30

更新时间： 2024-11-14 15:36:11

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K7P323688M-HC30 技术参数

K7P323688M

K7P321888M

1Mx36 & 2Mx18 SRAM

32Mb M-die LW SRAM Specification

119BGA with Pb & Pb-Free

(RoHS compliant)

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* Samsung Electronics reserves the right to change products or specification without notice.

Dec. 2005

Rev 1.3

- 1 -

12 3 4 5 6 7...14

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型号	品牌	获取价格	描述	数据表
K7P323688M-HC300	SAMSUNG	获取价格	Late-Write SRAM, 1MX36, 1.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
K7P401811A-H2500	SAMSUNG	获取价格	Standard SRAM, 256KX18, 2ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P401811A-H27	SAMSUNG	获取价格	Standard SRAM, 256KX18, 1.9ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P401811A-H2700	SAMSUNG	获取价格	Standard SRAM, 256KX18, 1.9ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P401811A-H30	SAMSUNG	获取价格	Standard SRAM, 256KX18, 1.8ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P401811A-H3000	SAMSUNG	获取价格	Standard SRAM, 256KX18, 1.8ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P401811A-HC250	SAMSUNG	获取价格	Late-Write SRAM, 256KX18, 2ns, CMOS, PBGA119
K7P401811A-HC25T	SAMSUNG	获取价格	Late-Write SRAM, 256KX18, 2ns, CMOS, PBGA119
K7P401811A-HC27T	SAMSUNG	获取价格	Late-Write SRAM, 256KX18, 1.9ns, CMOS, PBGA119
K7P401811A-HC300	SAMSUNG	获取价格	Late-Write SRAM, 256KX18, 1.8ns, CMOS, PBGA119