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K7P323666M-GC250 PDF预览

K7P323666M-GC250

更新时间: 2024-11-14 14:43:03
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
14页 446K
描述
Late-Write SRAM, 1MX36, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, BGA-119

K7P323666M-GC250 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:BGA,针数:119
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:2 ns其他特性:PIPELINED ARCHITECTURE, IT CAN ALSO OPERATE AT 1.8V SUPPLY
JESD-30 代码:R-PBGA-B119长度:22 mm
内存密度:37748736 bit内存集成电路类型:LATE-WRITE SRAM
内存宽度:36功能数量:1
端子数量:119字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX36封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装形状:RECTANGULAR
封装形式:GRID ARRAY并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:2.21 mm
最大供电电压 (Vsup):2.63 V最小供电电压 (Vsup):2.37 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:BALL端子节距:1.27 mm
端子位置:BOTTOM宽度:14 mm
Base Number Matches:1

K7P323666M-GC250 数据手册

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K7P323666M  
K7P321866M  
1Mx36 & 2Mx18 SRAM  
32Mb M-die LW SRAM Specification  
119BGA with Pb & Pb-Free  
(RoHS compliant)  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.  
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-  
lar applications where Product failure could result in loss of life or personal or physical harm, or any military  
or defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Dec. 2005  
Rev 1.2  
- 1 -  

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