是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | BGA, BGA119,7X17,50 |
针数: | 119 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.92 | 最长访问时间: | 2 ns |
其他特性: | PIPELINED ARCHITECTURE, IT CAN ALSO OPERATE AT 2.5V SUPPLY | 最大时钟频率 (fCLK): | 250 MHz |
I/O 类型: | COMMON | JESD-30 代码: | R-PBGA-B119 |
JESD-609代码: | e0 | 长度: | 22 mm |
内存密度: | 37748736 bit | 内存集成电路类型: | LATE-WRITE SRAM |
内存宽度: | 18 | 功能数量: | 1 |
端子数量: | 119 | 字数: | 2097152 words |
字数代码: | 2000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 2MX18 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | BGA |
封装等效代码: | BGA119,7X17,50 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 225 | 电源: | 1.8,2.5 V |
认证状态: | Not Qualified | 座面最大高度: | 2.21 mm |
最大待机电流: | 0.07 A | 最小待机电流: | 1.7 V |
子类别: | SRAMs | 最大压摆率: | 0.5 mA |
最大供电电压 (Vsup): | 1.9 V | 最小供电电压 (Vsup): | 1.7 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | TIN LEAD | 端子形式: | BALL |
端子节距: | 1.27 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 30 | 宽度: | 14 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K7P321874C-HC300 | SAMSUNG |
获取价格 |
Late-Write SRAM, 2MX18, 1.6ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 | |
K7P321888M-GC25 | SAMSUNG |
获取价格 |
SRAM | |
K7P321888M-GC250 | SAMSUNG |
获取价格 |
Late-Write SRAM, 2MX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, BGA | |
K7P321888M-GC30 | SAMSUNG |
获取价格 |
SRAM | |
K7P321888M-GC300 | SAMSUNG |
获取价格 |
Late-Write SRAM, 2MX18, 1.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, B | |
K7P321888M-HC25 | SAMSUNG |
获取价格 |
SRAM | |
K7P321888M-HC250 | SAMSUNG |
获取价格 |
Late-Write SRAM, 2MX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 | |
K7P321888M-HC30 | SAMSUNG |
获取价格 |
SRAM | |
K7P321888M-HC300 | SAMSUNG |
获取价格 |
Late-Write SRAM, 2MX18, 1.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 | |
K7P323666M | SAMSUNG |
获取价格 |
1Mx36 & 2Mx18 SRAM |