Datasheet > K7P321866M-GC30T

K7P321866M-GC30T

更新时间： 2024-11-14 14:43:03

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K7P321866M-GC30T 技术参数

K7P323666M

K7P321866M

1Mx36 & 2Mx18 SRAM

32Mb M-die LW SRAM Specification

119BGA with Pb & Pb-Free

(RoHS compliant)

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ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-

lar applications where Product failure could result in loss of life or personal or physical harm, or any military

or defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

Dec. 2005

Rev 1.2

- 1 -

12 3 4 5 6 7...14

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型号	品牌	获取价格	描述	数据表
K7P321866M-HC250	SAMSUNG	获取价格	Late-Write SRAM, 2MX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
K7P321866M-HC25T	SAMSUNG	获取价格	SRAM
K7P321866M-HC300	SAMSUNG	获取价格	Late-Write SRAM, 2MX18, 1.6ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
K7P321866M-HC30T	SAMSUNG	获取价格	SRAM
K7P321874C	SAMSUNG	获取价格	1Mx36 & 2Mx18 SRAM
K7P321874C-GC250	SAMSUNG	获取价格	Late-Write SRAM, 2MX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, BGA
K7P321874C-GC300	SAMSUNG	获取价格	Late-Write SRAM, 2MX18, 1.6ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, B
K7P321874C-HC250	SAMSUNG	获取价格	Late-Write SRAM, 2MX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
K7P321874C-HC300	SAMSUNG	获取价格	Late-Write SRAM, 2MX18, 1.6ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
K7P321888M-GC25	SAMSUNG	获取价格	SRAM