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K7P321866M-HC25T PDF预览

K7P321866M-HC25T

更新时间: 2024-11-15 09:17:31
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器
页数 文件大小 规格书
14页 446K
描述
SRAM

K7P321866M-HC25T 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

K7P321866M-HC25T 数据手册

 浏览型号K7P321866M-HC25T的Datasheet PDF文件第2页浏览型号K7P321866M-HC25T的Datasheet PDF文件第3页浏览型号K7P321866M-HC25T的Datasheet PDF文件第4页浏览型号K7P321866M-HC25T的Datasheet PDF文件第5页浏览型号K7P321866M-HC25T的Datasheet PDF文件第6页浏览型号K7P321866M-HC25T的Datasheet PDF文件第7页 
K7P323666M  
K7P321866M  
1Mx36 & 2Mx18 SRAM  
32Mb M-die LW SRAM Specification  
119BGA with Pb & Pb-Free  
(RoHS compliant)  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.  
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-  
lar applications where Product failure could result in loss of life or personal or physical harm, or any military  
or defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Dec. 2005  
Rev 1.2  
- 1 -  

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K7P321874C-GC300 SAMSUNG

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K7P321888M-GC250 SAMSUNG

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Late-Write SRAM, 2MX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, BGA
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SRAM