Datasheet > K7N327245M-HC200

K7N327245M-HC200

更新时间： 2024-09-09 09:47:51

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
20页	242K
描述
ZBT SRAM, 512KX72, 3.2ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, BGA-209

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K7N327245M-HC200 数据手册

Preliminary

K7N327245M

512Kx72 Pipelined NtRAM^TM

Document Title

512Kx72-Bit Pipelined NtRAM^TM

Revision History

Draft Date

Remark

Rev. No.

History

Advance

Preliminary

May. 10. 2001

Dec. 31. 2001

0.0

1. Initial document.

0.1

1. Speed bin merge.

From K7N327249M to K7N327245M

2. AC parameter change.

tOH(min)/tLZC(min) from 0.8 to 1.5 at -25

tOH(min)/tLZC(min) from 1.0 to 1.5 at -22

tOH(min)/tLZC(min) from 1.0 to 1.5 at -20

Preliminary

Feb. 11, 2003

0.2

1. Delete the speed bin (-22, -15, -13)

2. Update the JTAG boundary scan exit order.

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Feb. 2003

Rev 0.2

- 1 -

12 3 4 5 6 7...20

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型号	品牌	获取价格	描述	数据表
K7N327245M-HC250	SAMSUNG	获取价格	ZBT SRAM, 512KX72, 2.6ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, BGA-209
K7N401801A	SAMSUNG	获取价格	128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
K7N401801A-QC13	SAMSUNG	获取价格	ZBT SRAM, 256KX18, 4.2ns, CMOS, PQFP100
K7N401801A-QC13T	SAMSUNG	获取价格	ZBT SRAM, 256KX18, 4.2ns, CMOS, PQFP100
K7N401801A-QC15	SAMSUNG	获取价格	ZBT SRAM, 256KX18, 3.8ns, CMOS, PQFP100
K7N401801A-QC16	SAMSUNG	获取价格	ZBT SRAM, 256KX18, 3.5ns, CMOS, PQFP100
K7N401801A-QC16T	SAMSUNG	获取价格	ZBT SRAM, 256KX18, 3.5ns, CMOS, PQFP100
K7N401801A-TC13	SAMSUNG	获取价格	ZBT SRAM, 256KX18, 4.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7N401801A-TC130	SAMSUNG	获取价格	ZBT SRAM, 256KX18, 4.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7N401801A-TC15	SAMSUNG	获取价格	ZBT SRAM, 256KX18, 3.8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100