Datasheet > K7N401801M

K7N401801M

更新时间： 2024-09-14 11:27:43

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
17页	269K
描述
128Kx36 & 256Kx18 Pipelined NtRAM-TM

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K7N401801M 数据手册

K7N403601M

K7N401801M

128Kx36 & 256Kx18 Pipelined NtRAM^TM

Document Title

128Kx36 & 256Kx18-Bit Pipelined NtRAM^TM

Revision History

Rev.No.

History

Draft Date

Remark

0.0

1. Initial document.

July.06. 1998

Oct. 10 . 1998

Preliminary

0.1

1. Changed tCD,tOE from 4.0ns to 4.2ns at -75

2. Changed DC condition at Icc and parameters

ISB1 ; from 10mA to 30mA,

ISB2 ; from 10mA to 30mA.

0.2

0.3

1.0

2.0

3.0

Add VDDQ Supply voltage( 2.5V I/O )

Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O.

Final spec Release.

Dec. 10. 1998

Dec. 23. 1998

Jan. 29. 1999

Feb. 25. 1999

May. 13. 1999

Preliminary

Final

Remove VDDQ Supply voltage( 2.5V I/O )

Add VDDQ Supply voltage( 2.5V I/O )

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

May 1999

Rev 3.0

12 3 4 5 6 7...17

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