Datasheet > K7N401801M-QC750

K7N401801M-QC750

更新时间： 2024-09-14 14:43:03

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
17页	388K
描述
SRAM

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技术参数
数据手册

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K7N401801M-QC750 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.8
Is Samacsys：	N	Base Number Matches：	1

K7N401801M-QC750 数据手册

K7N403601M

K7N401801M

128Kx36 & 256Kx18 Pipelined NtRAM^TM

Document Title

128Kx36 & 256Kx18-Bit Pipelined NtRAM^TM

Revision History

Rev.No.

History

Draft Date

Remark

0.0

1. Initial document.

July.06. 1998

Oct. 10 . 1998

Preliminary

0.1

1. Changed tCD,tOE from 4.0ns to 4.2ns at -75

2. Changed DC condition at Icc and parameters

ISB1 ; from 10mA to 30mA,

ISB2 ; from 10mA to 30mA.

0.2

0.3

1.0

2.0

3.0

Add VDDQ Supply voltage( 2.5V I/O )

Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O.

Final spec Release.

Dec. 10. 1998

Dec. 23. 1998

Jan. 29. 1999

Feb. 25. 1999

May. 13. 1999

Preliminary

Final

Remove VDDQ Supply voltage( 2.5V I/O )

Add VDDQ Supply voltage( 2.5V I/O )

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

May 1999

Rev 3.0

12 3 4 5 6 7...17

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K7N401801M-TC130	SAMSUNG	获取价格	ZBT SRAM, 256KX18, 4.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
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K7N401809A-QC18	SAMSUNG	获取价格	ZBT SRAM, 256KX18, 3ns, CMOS, PQFP100
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K7N401809A-TC18	SAMSUNG	获取价格	ZBT SRAM, 256KX18, 3ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100