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K7N401801B-QI160 PDF预览

K7N401801B-QI160

更新时间: 2024-09-14 19:52:43
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
18页 397K
描述
ZBT SRAM, 256KX18, 3.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

K7N401801B-QI160 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFP包装说明:LQFP,
针数:100Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92最长访问时间:3.5 ns
其他特性:PIPELINED ARCHITECTUREJESD-30 代码:R-PQFP-G100
JESD-609代码:e0长度:20 mm
内存密度:4718592 bit内存集成电路类型:ZBT SRAM
内存宽度:18功能数量:1
端子数量:100字数:262144 words
字数代码:256000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX18封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):230认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:14 mmBase Number Matches:1

K7N401801B-QI160 数据手册

 浏览型号K7N401801B-QI160的Datasheet PDF文件第2页浏览型号K7N401801B-QI160的Datasheet PDF文件第3页浏览型号K7N401801B-QI160的Datasheet PDF文件第4页浏览型号K7N401801B-QI160的Datasheet PDF文件第5页浏览型号K7N401801B-QI160的Datasheet PDF文件第6页浏览型号K7N401801B-QI160的Datasheet PDF文件第7页 
K7N403601B  
K7N403201B  
K7N401801B  
128Kx36/x32 & 256Kx18 Pipelined NtRAMTM  
Document Title  
128Kx36 & 128Kx32 & 256Kx18-Bit Pipelined NtRAMTM  
Revision History  
Rev.No.  
History  
Draft Date  
Remark  
0.0  
1. Initial document.  
May. 15. 2001  
June. 12. 2001  
Preliminary  
Preliminary  
0.1  
1. Changed DC parameters  
Icc ; from 350mA to 290mA at -16,  
from 330mA to 270mA at -15,  
from 300mA to 250mA at -13,  
ISB1 ; from 100mA to 80mA  
0.2  
1.0  
1. Add x32 org. and industrial temperature  
Aug. 11. 2001  
Nov. 15. 2001  
Preliminary  
Final  
1. Final spec release  
2. Changed Pin Capacitance  
- Cin ; from 5pF to 4pF  
- Cout ; from 7pF to 6pF  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
November 2001  
Rev 1.0  

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