Datasheet > JANTX2N6058

JANTX2N6058

更新时间： 2024-11-03 21:55:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管放大器局域网
页数	文件大小	规格书
2页	59K
描述
NPN DARLINGTON POWER SILICON TRANSISTOR

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JANTX2N6058 数据手册

TECHNICAL DATA

NPN DARLINGTON POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 502

Devices

Qualified Level

JANTX

JANTXV

2N6058

2N6059

MAXIMUM RATINGS

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Base Current

2N6058 2N6059

Symbol

V_CEO

V_CBO

V_EBO

I_B

Units

Vdc

Adc

100

5.0

0.2

Collector Current

Total Power Dissipation⁽¹⁾

I_C

@ T_C= +25⁰C

@ T_C= +100⁰C

150

⁰C

P_T

Operating & Storage Junction Temperature Range

-55 to +175

T_J_,T

stg

THERMAL CHARACTERISTICS

Characteristics

TO-3*

(TO-204AA)

Symbol

Max.

Unit

⁰C/W

Thermal Resistance, Junction-to-Case

1) Derate linearly at 1.0 W/⁰C above T_C> +25⁰C

1.0

qJC

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_C= 25⁰C unless otherwise noted)

Characteristics

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 100 mAdc

Symbol

Min.

Max.

Unit

Vdc

100

2N6058

2N6059

V_(BR)

CEO

Collector-Emitter Cutoff Current

V_CE= 40 Vdc

V_CE= 50 Vdc

Collector-Emitter Cutoff Current

V_CE= 80 Vdc, V_BE= 1.5 Vdc

V_CE= 100 Vdc, V_BE= 1.5 Vdc

Emitter-Base Cutoff Current

V_EB= 5.0 Vdc

1.0

mAdc

2N6058

2N6059

I_CEO

I_CEX

I_EBO

0.5

2N6058

2N6059

2.0

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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