是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | TO-254AA |
包装说明: | FLANGE MOUNT, S-XSFM-P3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.26 |
最大集电极电流 (IC): | 10 A | 集电极-发射极最大电压: | 200 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JEDEC-95代码: | TO-254AA | JESD-30 代码: | S-XSFM-P3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 200 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | SQUARE | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 175 W | 认证状态: | Qualified |
参考标准: | MIL-19500/510 | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
JAN2N6249T1 | MICROSEMI |
完全替代 |
Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-2 | |
JANTXV2N6249T1 | MICROSEMI |
完全替代 |
Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-2 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTX2N6250 | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR | |
JANTX2N6250T1 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 275V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-2 | |
JANTX2N6251 | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR | |
JANTX2N6251T1 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-2 | |
JANTX2N6274 | MICROSEMI |
获取价格 |
PNP POWER SILICON TRANSISTOR | |
JANTX2N6277 | MICROSEMI |
获取价格 |
PNP POWER SILICON TRANSISTOR | |
JANTX2N6283 | MICROSEMI |
获取价格 |
NPN DARLINGTON POWER SILICON TRANSISTOR | |
JANTX2N6284 | MICROSEMI |
获取价格 |
NPN DARLINGTON POWER SILICON TRANSISTOR | |
JANTX2N6286 | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 20A I(C) | TO-3 | |
JANTX2N6287 | MICROSEMI |
获取价格 |
PNP DARLINGTON POWER SILICON TRANSISTOR |