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JANTX2N3739 PDF预览

JANTX2N3739

更新时间: 2024-01-15 19:28:28
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页数 文件大小 规格书
15页 83K
描述
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 250MA I(C) | TO-66

JANTX2N3739 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:FLANGE MOUNT, O-MBFM-P2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.09
外壳连接:COLLECTOR最大集电极电流 (IC):0.25 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-213
JESD-30 代码:O-MBFM-P2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:175 °C封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):20 W
认证状态:Not Qualified参考标准:MIL
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:PIN/PEG
端子位置:BOTTOM晶体管元件材料:SILICON
标称过渡频率 (fT):10 MHzBase Number Matches:1

JANTX2N3739 数据手册

 浏览型号JANTX2N3739的Datasheet PDF文件第2页浏览型号JANTX2N3739的Datasheet PDF文件第3页浏览型号JANTX2N3739的Datasheet PDF文件第4页浏览型号JANTX2N3739的Datasheet PDF文件第5页浏览型号JANTX2N3739的Datasheet PDF文件第6页浏览型号JANTX2N3739的Datasheet PDF文件第7页 
This documentation process conversion measures necessary to  
comply with this revision shall be completed by 30 October 1999.  
INCH-POUND  
MIL-PRF-19500/402C  
30 August 1999  
SUPERSEDING  
MIL-S-19500/402B  
8 April 1993  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER  
TYPE 2N3739  
JAN, JANTX AND JANTXV  
This specification is approved for use by all Depart-  
ments and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product  
assurance are provided for each device type as specified in MIL-PRF-19500.  
1.2 Physical dimensions. See figure 1 (similar to TO-66)  
1.3 Maximum ratings.  
Types  
P
1/  
P
2/  
V
V
V
I
T
and T  
C
R
T
T
CBO  
CEO  
EBO  
B
STG  
J
I
JC  
C
T
= +25 C  
T
= +100 C  
C
C
W
W
V dc  
325  
V dc  
300  
V dc  
6.0  
A dc  
0.5  
A dc  
1.0  
C/W  
7.5  
2N3739  
20  
10  
-55 to +200  
1/ Derate linearly, 0.114 W/ C for TC +25 C.  
2/ Derate linearly, 0.100 W/ C for TC +100 C.  
1.4 Primary electrical characteristics at TA = 25 C.  
Switching  
h
FE1  
1/  
h
FE3  
1/  
V
V
C
obo  
|h |  
fe  
BE  
CE(SAT)  
Limit  
V
= 10 V dc  
V
= 10 V dc  
V
= 10 V dc  
I
= 250 mA dc  
= 25 mA dc  
V
= 100 V dc  
V = 10 V dc  
CE  
CE  
CE  
CE  
C
CB  
t
t
off  
on  
I
= 10 mA dc I = 100 mA dc I = 100 mA dc  
I
I
= 0 mA dc  
I
C
= 100 mA dc  
f = 10 MHz  
C
C
C
B
E
100 kHz f 1 MHz  
V dc  
1
V dc  
2.5  
pF  
s
s
Min  
Max  
30  
40  
200  
1
6
20  
1.5  
3.5  
1/ Pulsed (see 4.5.1)  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this  
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street,  
Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end  
of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  

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