Datasheet > JANHCA2N6782

JANHCA2N6782

更新时间： 2024-11-02 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
24页	160K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 3.5A I(D) \| TO-39

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JANHCA2N6782 数据手册

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 26 March 1998.

INCH-POUND

MIL-PRF-19500/556F

24 December 1997

SUPERSEDING

MIL-S-19500/556E

9 December 1994

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON

TYPES 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, AND 2N6786U

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power

transistor. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two

levels of product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figure 1 [similar to TO-205AF (formerly TO-39)], figure 3 (LCC), and figures 4 and 5 for JANHC and

JANKC die dimensions.

1.3 Maximum ratings. Unless otherwise specified, T = +25 C.

Type

T and

= +25 C

= +100 C

STG

V dc

A dc

A(pk)

2N6782

2N6784

2N6786

0.8

100

200

400

100

200

400

3.50

2.25

1.25

2.25

1.50

0.80

3.50

2.25

1.25

14.0

9.0

5.5

-55 to +150

1/ Derate linearly 0.12 W/ C for T > +25 C.

- T

J max C

P_T=

T_{J( max )}T_C

x ( at

T_{J( max )}

I _D

(

R_θJX)

R_DS(on)

3/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...24

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与JANHCA2N6782相关器件

型号	品牌	获取价格	描述	数据表
JANHCA2N6784	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 2.25A I(D) \| TO-39
JANHCA2N6786	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 1.2A I(D) \| TO-39
JANHCA2N6788	INFINEON	获取价格	Small Signal Field-Effect Transistor, 6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-
JANHCA2N6790	INFINEON	获取价格	Small Signal Field-Effect Transistor, 3.5A I(D), 200V, 1-Element, N-Channel, Silicon, Meta
JANHCA2N6792	INFINEON	获取价格	Small Signal Field-Effect Transistor, 2A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-
JANHCA2N6794	INFINEON	获取价格	Small Signal Field-Effect Transistor, 1.5A I(D), 500V, 1-Element, N-Channel, Silicon, Meta
JANHCA2N6796	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 8A I(D) \| TO-39
JANHCA2N6798	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 5.5A I(D) \| TO-39
JANHCA2N6800	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 3A I(D) \| TO-39
JANHCA2N6802	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 3.5A I(D) \| TO-39

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