Datasheet > JANHCAR2N7545

JANHCAR2N7545

更新时间： 2024-11-03 20:03:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
16页	115K
描述
Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

JANHCAR2N7545 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.06
配置：	Single	最大漏极电流 (Abs) (ID)：	12.5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	75 W	子类别：	Other Transistors
Base Number Matches：	1

JANHCAR2N7545 数据手册

METRIC

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 30 April 2009.

MIL-PRF-19500/741A

30 January 2009

SUPERSEDING

MIL-PRF-19500/741

14 March 2006

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED

(TOTAL DOSE AND SINGLE EVENT EFFECTS)

TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON,

VARIOUS TYPES, JANHC AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for N-channel and P-channel, enhancement-

mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor die. Two levels of

product assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figures 1 through 8 herein.

1.3 Maximum ratings. See the applicable performance specification sheet from table I herein.

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of

this address information using the ASSIST Online database at http://assist.daps.dla.mil/.

AMSC N/A

FSC 5961

12 3 4 5 6 7...16

中文翻译

下载PDF

与JANHCAR2N7545相关器件

型号	品牌	获取价格	描述	数据表
JANHCB1N4371A	CDI-DIODE	获取价格	Zener Diode
JANHCB1N4372A	CDI-DIODE	获取价格	Zener Diode
JANHCB1N5518B	CDI-DIODE	获取价格	DIODE 3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DIE-2, Voltage Regula
JANHCB1N5519B	CDI-DIODE	获取价格	DIODE 3.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DIE-2, Voltage Regula
JANHCB1N5520B	CDI-DIODE	获取价格	DIODE 3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DIE-2, Voltage Regula
JANHCB1N5521B	CDI-DIODE	获取价格	DIODE 4.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DIE-2, Voltage Regula
JANHCB1N5523B	CDI-DIODE	获取价格	DIODE 5.1 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DIE-2, Voltage Regula
JANHCB1N5528B	CDI-DIODE	获取价格	Zener Diode, 8.2V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-2
JANHCB1N5531B	CDI-DIODE	获取价格	Zener Diode, 11V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-2
JANHCB1N5533B	CDI-DIODE	获取价格	DIODE 13 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DIE-2, Voltage Regulat

与JANHCAR2N7545相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

10
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

4
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

26
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

25

产品中心

服务支持

精选活动

关于我们

帮助中心

JANHCAR2N7545

JANHCAR2N7545 技术参数

JANHCAR2N7545 数据手册

与JANHCAR2N7545相关器件

与JANHCAR2N7545相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANHCAR2N7545

JANHCAR2N7545 技术参数

JANHCAR2N7545 数据手册

与JANHCAR2N7545相关器件

与JANHCAR2N7545相关文章

您还可以找

您在本页遇到什么问题？