5秒后页面跳转
捷配首页

Datasheet > JANHCB1N5550
JANHCB1N5550 PDF预览

JANHCB1N5550

更新时间： 2024-11-02 22:05:43
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
28页 202K
描述
This specification covers the performance requirements for silicon, general purpose,

阅读下载

中文翻译

获取价格

JANHCB1N5550 数据手册

 浏览型号JANHCB1N5550的Datasheet PDF文件第2页浏览型号JANHCB1N5550的Datasheet PDF文件第3页浏览型号JANHCB1N5550的Datasheet PDF文件第4页浏览型号JANHCB1N5550的Datasheet PDF文件第5页浏览型号JANHCB1N5550的Datasheet PDF文件第6页浏览型号JANHCB1N5550的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 19 July 2004.  
INCH-POUND  
MIL-PRF-19500/420H  
19 April 2004  
SUPERSEDING  
MIL-PRF-19500/420G  
30 December 2002  
PERFORMANCE SPECIFICATION SHEET  
* SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,  
TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US,  
JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD,  
JANHCE, JANKCA, JANKCD, AND JANKCE  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
*
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
* 1.1 Scope. This specification covers the performance requirements for silicon, general purpose, semiconductor  
diodes. Four levels of product assurance are provided for each encapsulated device type as specified in  
MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.  
1.2 Physical dimensions. See figure 1 (similar to DO-41) for 1N5550 through 1N5554, figure 2 for 1N5550US  
through 1N5554US, and figures 3, 4, 5, 6, and 7 for JANHC and JANKC die.  
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C and ratings apply to all case outlines.  
Col. 1  
Type  
Col. 3  
Col. 4  
Col. 5  
Col. 6  
Col. 7  
Col. 8  
Col. 2  
I
I
T
J
I
T
STG  
O1  
T = +55°C;  
FSM  
= 2 A dc  
O
O2  
V
RWM  
V
(BR)  
I
p
T =  
A
L
and  
(BR)min  
L = .375 inch t = 1/120 s  
+55°C  
V
(1) (2) (3)  
T = +55°C  
(2) (4)  
A
V dc  
A dc  
A(pk)  
A dc  
°C  
°C  
1N5550, 1N5550US  
1N5551, 1N5551US  
1N5552, 1N5552US  
1N5553, 1N5553US  
200  
400  
600  
800  
200  
400  
600  
800  
5
5
5
5
5
100  
100  
100  
100  
100  
3
3
3
3
3
-65 to +200  
-65 to +200  
-65 to +200  
-65 to +200  
-65 to +200  
-65 to +175  
-65 to +175  
-65 to +175  
-65 to +175  
-65 to +175  
1N5554, 1N5554US 1,000  
1,000  
(1) Derate linearly at 41.6 mA/°C above T = +55°C at L = .375 inch (9.53 mm).  
L
(2) An I of up to 6 A dc is allowable provided that appropriate heat sinking or forced air cooling maintains the  
O
maximum junction temperature at or below +200°C as proven by the junction temperature rise test (see 6.5).  
Barometric pressure reduced:  
1N5550, 1N5551, 1N5552 - 8 mmHg (100,000 feet).  
1N5553, 1N5554  
- 33 mmHg (70,000 feet).  
(3) Does not apply to surface mount devices.  
(4) Derate linearly at 25 mA/°C above T = +55°C.  
A
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,  
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to  
Semiconduction@dscc.dla.mil . Since contact information can change, you may want to verify the currency of  
this address information using the ASSIST Online database at http://www.dodssp.daps.mil.  
AMSC N/A  
FSC 5961  
1234567...28

中文翻译

下载PDF

与JANHCB1N5550相关器件

型号 品牌 获取价格 描述 数据表
JANHCB1N5551 ETC

获取价格

 		This specification covers the performance requirements for silicon, general purpose,
JANHCB1N5552 ETC

获取价格

 		This specification covers the performance requirements for silicon, general purpose,
JANHCB1N5553 ETC

获取价格

 		This specification covers the performance requirements for silicon, general purpose,
JANHCB1N5554 ETC

获取价格

 		This specification covers the performance requirements for silicon, general purpose,
JANHCB1N6325 SENSITRON

获取价格

 		Zener Diode,
JANHCB1N6334 SENSITRON

获取价格

 		Zener Diode,
JANHCB1N6346 SENSITRON

获取价格

 		Zener Diode,
JANHCB1N6351 SENSITRON

获取价格

 		Zener Diode,
JANHCB1N747A CDI-DIODE

获取价格

 		DIODE 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DIE, Voltage Regulator Diode
JANHCB1N748A MICROSEMI

获取价格

 		Zener Diode, 5%, 0.4W, Silicon, Unidirectional, DIE

与JANHCB1N5550相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证