Datasheet > JANHCB1N5540B

JANHCB1N5540B

更新时间： 2024-11-04 07:34:19

品牌	Logo	应用领域
CDI-DIODE		/
页数	文件大小	规格书
19页	141K
描述
Zener Diode, 20V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-2

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANHCB1N5540B 数据手册

INCH POUND

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 18 January 2005.

MIL-PRF-19500/437E

18 October 2004

SUPERSEDING

MIL-PRF-19500/437D

15 September 1997

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES,

1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1,

1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1

JAN, JANTX, JANTXV, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage

regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance

are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance

for each unencapsulated device type die. For JANHC and JANKC quality levels (see 6.5).

1.2 Physical dimensions. See figures 1 (DO-7 and DO-35), 2 (DO-213AA), and 3 (JANHC and JANKC).

* 1.3 Maximum ratings. Maximum ratings are shown in 3.8 herein and as follows:

P = 500 mW (DO-7 and D0-35) at T = +50°C, L = .375 inch (9.53 mm); both ends of case or

T L

diode body to heat sink at L = .375 inch (9.53 mm). (Derate I to 0.0 mA dc at +175°C).

= 500 mW (D0-213AA) at T

= +125°C. (Derate to 0 at +175°C).

≤ +175°C; -65°C ≤ T ≤ +175°C.

c. -65°C ≤ T

STG

* 1.4 Primary electrical characteristics. Primary electrical characteristic see 3.8 herein and as follows:

a. 3.3 V dc ≤ V ≤ 33 V dc.

= 250°C/W (maximum) at L = .375 inch (9.53 mm) (D0-7 and D0-35).

θJL

θJEC

= 100°C/W (maximum) junction to end-caps (D0-213AA).

d. For derating see figures 4 and 5.

Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,

ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since

contact information can change, you may want to verify the currency of this address information using the ASSIST

Online database at http://www.dodssp.daps.mil.

AMSC N/A

FSC 5961

12 3 4 5 6 7...19

中文翻译

下载PDF

与JANHCB1N5540B相关器件

型号	品牌	获取价格	描述	数据表
JANHCB1N5542B	CDI-DIODE	获取价格	DIODE 24 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DIE-2, Voltage Regulat
JANHCB1N5546B	CDI-DIODE	获取价格	DIODE 33 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DIE-2, Voltage Regulat
JANHCB1N5550	ETC	获取价格	This specification covers the performance requirements for silicon, general purpose,
JANHCB1N5551	ETC	获取价格	This specification covers the performance requirements for silicon, general purpose,
JANHCB1N5552	ETC	获取价格	This specification covers the performance requirements for silicon, general purpose,
JANHCB1N5553	ETC	获取价格	This specification covers the performance requirements for silicon, general purpose,
JANHCB1N5554	ETC	获取价格	This specification covers the performance requirements for silicon, general purpose,
JANHCB1N6325	SENSITRON	获取价格	Zener Diode,
JANHCB1N6334	SENSITRON	获取价格	Zener Diode,
JANHCB1N6346	SENSITRON	获取价格	Zener Diode,

与JANHCB1N5540B相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

10
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

4
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

26
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

25

产品中心

服务支持

精选活动

关于我们

帮助中心

JANHCB1N5540B

JANHCB1N5540B 数据手册

与JANHCB1N5540B相关器件

与JANHCB1N5540B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANHCB1N5540B

JANHCB1N5540B 数据手册

与JANHCB1N5540B相关器件

与JANHCB1N5540B相关文章

您还可以找

您在本页遇到什么问题？