Datasheet > JANHCA2N6802

JANHCA2N6802

更新时间： 2024-11-02 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
23页	170K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 3.5A I(D) \| TO-39

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JANHCA2N6802 数据手册

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 09 March 1998

INCH-POUND

MIL-PRF-19500/557F

09 December 1997

SUPERSEDING

MIL-S-19500/557E

9 December 1994

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON

TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor

intended for use in high density power switching applications. Three levels of product assurance are provided for each encapsulated

device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figure 1, TO-205AF (formerly TO-39), figure 3 (LCC), and figure 4 for JANHC and JANKC die

dimensions.

1.3 Maximum ratings. Unless otherwise specified, T = +25 C.

Type

T and

= +25 C T = +25 C

= +25 C

= +100 C

STG

V dc

A dc

A(pk)

2N6796

2N6798

2N6800

2N6802

0.8

100

200

400

500

100

200

400

500

8.0

5.5

3.0

2.5

5.0

3.5

2.0

1.5

8.0

5.5

3.0

2.5

-55 to +150

1/ Derate linearly 0.2 W/ C for T > +25 C.

- T

J max C

T_{J( max )}T_C

x ( at

T_{J( max )}

I_D

(

R_θJX)

R_DS(on)

3/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...23

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与JANHCA2N6802相关器件

型号	品牌	获取价格	描述	数据表
JANHCA2N6804	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 11A I(D) \| TO-204AA
JANHCA2N6806	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 6.5A I(D) \| TO-204AA
JANHCA2N6845	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 4A I(D) \| TO-205AF
JANHCA2N6847	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 2.5A I(D) \| TO-205AF
JANHCA2N6849	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 6.5A I(D) \| TO-205AF
JANHCA2N6851	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 4A I(D) \| TO-205AF
JANHCA2N7218	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide
JANHCA2N7219	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide
JANHCA2N7221	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide
JANHCA2N7222	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide S

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