Datasheet > JANHCA2N6851

JANHCA2N6851

更新时间： 2024-11-02 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
22页	131K
描述
TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 4A I(D) \| TO-205AF

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANHCA2N6851 数据手册

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 22 March 1998.

INCH-POUND

MIL-PRF-19500/564E

22 December 1997

SUPERSEDING

MIL-S-19500/564D

9 December 1994

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON

TYPES 2N6849, 2N6849U, 2N6851 AND 2N6851U

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor.

Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product

assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figures 1 and 2, TO-205AF (formerly TO-39), 3 (LCC), and figures 4, 5, and 6 for JANHC and JANKC

die dimensions.

1.3 Maximum ratings. Unless otherwise specified, T = +25 C.

Type

T and

= +25 C

= +100 C

STG

V dc

A dc

A(pk)

2N6849

2N6851

0.8

-100

-200

-100

-200

-6.5

-4.0

-4.1

-2.4

-6.5

-4.0

-25

-20

-55 to +150

1/ Derate linearly 0.2 W/ C for T > +25 C.

- T

J max C

T_{J max}

) x (

T_C

I_D

(

)

R_θ

T_Jmax

DS_on

3/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...22

中文翻译

下载PDF

与JANHCA2N6851相关器件

型号	品牌	获取价格	描述	数据表
JANHCA2N7218	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide
JANHCA2N7219	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide
JANHCA2N7221	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide
JANHCA2N7222	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide S
JANHCA2N7224	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 34A I(D) \| TO-254AA
JANHCA2N7225	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 27.4A I(D) \| TO-254AA
JANHCA2N7227	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 14A I(D) \| TO-254AA
JANHCA2N7228	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 12A I(D) \| TO-254AA
JANHCA2N7236	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 18A I(D) \| TO-254AA
JANHCA2N7237	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 11A I(D) \| TO-254AA

与JANHCA2N6851相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

10
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

4
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

26
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

25

产品中心

服务支持

精选活动

关于我们

帮助中心

JANHCA2N6851

JANHCA2N6851 数据手册

与JANHCA2N6851相关器件

与JANHCA2N6851相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANHCA2N6851

JANHCA2N6851 数据手册

与JANHCA2N6851相关器件

与JANHCA2N6851相关文章

您还可以找

您在本页遇到什么问题？