Datasheet > JANHCA2N7228

JANHCA2N7228

更新时间： 2024-11-02 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
25页	133K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 12A I(D) \| TO-254AA

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JANHCA2N7228 数据手册

The documentation and process conversion

measures necessary to comply with this

revision shall be completed by 21 September 1996

IINCH-POUND

MIL-PRF-19500/592C

21 June 1996

SUPERSEDING

MIL-S-19500/592B

31 January 1991

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL,

SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U,

2N7227U, AND 2N7228U JANTX, JANTXV, JANS, JANHC AND JANKC

This specification supersedes DESC drawing 89026 (see 6.3.1).

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power

transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each

encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die,

with avalanche energy ratings (E

and E ) and maximum avalanche current (I ).

AR AR

1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 for surface mount devices, and figure 3 for JANHC and JANKC (die)

dimensions.

1.3 Maximum ratings (T = +25 C, unless otherwise specified).

Type 1/

ISO

and

70,000

foot

max

= +25 C = +25 C

= +25 C

= +100 C

STG

V dc

A dc

A(pk)

C/W

2N7224

2N7225

2N7226

2N7227

150

4.0

34.0

27.4

14.0

12.0

34.0

27.4

14.0

12.0

136

110

-55

+150

0.83

400

500

See footnotes on next page.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ELDT, 1507 Wilmington Pike, Dayton, OH

45444-5765, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC/NA

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...25

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与JANHCA2N7228相关器件

型号	品牌	获取价格	描述	数据表
JANHCA2N7236	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 18A I(D) \| TO-254AA
JANHCA2N7237	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 11A I(D) \| TO-254AA
JANHCAR2N3810	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78,
JANHCAR2N7391	INFINEON	获取价格	Power Field-Effect Transistor, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Se
JANHCAR2N7545	INFINEON	获取价格	Transistor,
JANHCB1N4371A	CDI-DIODE	获取价格	Zener Diode
JANHCB1N4372A	CDI-DIODE	获取价格	Zener Diode
JANHCB1N5518B	CDI-DIODE	获取价格	DIODE 3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DIE-2, Voltage Regula
JANHCB1N5519B	CDI-DIODE	获取价格	DIODE 3.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DIE-2, Voltage Regula
JANHCB1N5520B	CDI-DIODE	获取价格	DIODE 3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DIE-2, Voltage Regula

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