Datasheet > JANHCA2N7236

JANHCA2N7236

更新时间： 2024-11-02 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
19页	125K
描述
TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 18A I(D) \| TO-254AA

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JANHCA2N7236 数据手册

The documentation and process conversion

measures necessary to comply with this

revision shall be completed by 13 November

2002.

INCH-POUND

MIL-PRF-19500/595D

13 August 2002

SUPERSEDING

MIL-PRF-19500/595C

26 August 1996

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,

TRANSISTOR, P-CHANNEL, SILICON,

TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

* 1.1 Scope. This specification covers the performance requirements for an P-channel, enhancement-mode,

MOSFET, power transistor intended for use in high density power switching applications. Four levels of product

assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product

assurance for each unencapsulated device type die, with avalanche energy ratings (E

and E ) and maximum

avalanche current (I ).

* 1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 (T0-267AB) for surface mount devices, and figure 3

for JANHC and JANKC (die) dimensions.

* 1.3 Maximum ratings (T_C= +25°C, unless otherwise specified).

Min

Type

V_(BR)DSSP_T(1)

P_T

T_A=

V_GSI_D1(2)

T_C=

_D2(2)

T_C=

I_S

I_DM

(3)

T_op

and

T_STG

R_θ

max

V_GS= 0

I_D= -1.0

mA dc

V dc

T_C=

+25°C +25°C

+25°C +100°C

V dc

A dc

A(pk)

°C

°C/W

2N7236, 2N7236U

2N7237, 2N7237U

-100

-200

125

4.0

-18

-11

-7

-18

-11

-72

-44

-55 to +150

1.0

±20

See footnotes next page.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,

P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD

Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited

12 3 4 5 6 7...19

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与JANHCA2N7236相关器件

型号	品牌	获取价格	描述	数据表
JANHCA2N7237	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 11A I(D) \| TO-254AA
JANHCAR2N3810	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78,
JANHCAR2N7391	INFINEON	获取价格	Power Field-Effect Transistor, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Se
JANHCAR2N7545	INFINEON	获取价格	Transistor,
JANHCB1N4371A	CDI-DIODE	获取价格	Zener Diode
JANHCB1N4372A	CDI-DIODE	获取价格	Zener Diode
JANHCB1N5518B	CDI-DIODE	获取价格	DIODE 3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DIE-2, Voltage Regula
JANHCB1N5519B	CDI-DIODE	获取价格	DIODE 3.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DIE-2, Voltage Regula
JANHCB1N5520B	CDI-DIODE	获取价格	DIODE 3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DIE-2, Voltage Regula
JANHCB1N5521B	CDI-DIODE	获取价格	DIODE 4.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DIE-2, Voltage Regula

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