Datasheet > JANHCA2N6806

JANHCA2N6806

更新时间： 2024-11-02 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
20页	116K
描述
TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 6.5A I(D) \| TO-204AA

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JANHCA2N6806 数据手册

The documentation and process conversion

measures necessary to comply with this revision shall

be completed by 30 October 1999

INCH-POUND

MIL-PRF-19500/562C

30 July 1999

SUPERSEDING

MIL-S-19500/562B

7 January 1994

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON

TYPES 2N6804 AND 2N6806

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor

intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated

device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figure 1, TO-204AA (formerly TO-3), figures 2 and 3 for JANHC and JANKC die dimensions.

1.3 Maximum ratings. Unless otherwise specified, T = +25°C.

Type

T and T

J STG

= +25°C

T = +100°C

V dc

A dc

A(pk)

°C

2N6804

2N6806

-100

-200

-100

-200

-11.0

-6.5

-7.0

-4.0

-11.0

-6.5

-50

-28

-55 to +150

± 20

1/ Derate linearly 0.6 W/°C for T > +25°C:

T_{J max}- T_C

R_QJC

T_{J max}

I_D

(R_QJCxR_DS(on)atT_{J max}

)

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...20

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与JANHCA2N6806相关器件

型号	品牌	获取价格	描述	数据表
JANHCA2N6845	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 4A I(D) \| TO-205AF
JANHCA2N6847	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 2.5A I(D) \| TO-205AF
JANHCA2N6849	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 6.5A I(D) \| TO-205AF
JANHCA2N6851	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 4A I(D) \| TO-205AF
JANHCA2N7218	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide
JANHCA2N7219	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide
JANHCA2N7221	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide
JANHCA2N7222	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide S
JANHCA2N7224	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 34A I(D) \| TO-254AA
JANHCA2N7225	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 27.4A I(D) \| TO-254AA

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