Datasheet > JANHCA2N6847

JANHCA2N6847

更新时间： 2024-11-02 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
21页	130K
描述
TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 2.5A I(D) \| TO-205AF

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JANHCA2N6847 数据手册

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 13 March 1998.

INCH-POUND

MIL-PRF-19500/563E

13 December 1997

SUPERSEDING

MIL-S-19500/563D

31 March 1995

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON

TYPES 2N6845, 2N6845U, 2N6847, AND 2N6847U

JAN, JANTX, JANTXV, JANS, JANHC AND JANKC

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, power

transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels

of product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figure 1, TO-205AF (formerly TO-39), 3 (LCC), and figures 4 and 5 for JANHCA and JANKC die

dimensions.

1.3 Maximum ratings. Unless otherwise specified, T = +25 C.

Type

T and

= +25 C T = +25 C

= +25 C

= +100 C

STG

V dc

A dc

A(pk)

2N6845

2N6847

0.8

-100

-200

-100

-200

-4.0

-2.5

-2.6

-1.6

-4.0

-2.5

-16

-10

-55 to +150

1/ Derate linearly 0.16 W/ C for T > +25 C.

T - T

J max C

T_{J max}

T_C

I_D

(

)

R_θJCR_DS(on)

T_{J max}

3/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...21

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与JANHCA2N6847相关器件

型号	品牌	获取价格	描述	数据表
JANHCA2N6849	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 6.5A I(D) \| TO-205AF
JANHCA2N6851	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 4A I(D) \| TO-205AF
JANHCA2N7218	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide
JANHCA2N7219	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide
JANHCA2N7221	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide
JANHCA2N7222	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide S
JANHCA2N7224	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 34A I(D) \| TO-254AA
JANHCA2N7225	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 27.4A I(D) \| TO-254AA
JANHCA2N7227	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 14A I(D) \| TO-254AA
JANHCA2N7228	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 12A I(D) \| TO-254AA

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