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JANHCA2N6794 PDF预览

JANHCA2N6794

更新时间: 2024-11-03 20:31:19
品牌 Logo 应用领域
英飞凌 - INFINEON 开关晶体管
页数 文件大小 规格书
29页 401K
描述
Small Signal Field-Effect Transistor, 1.5A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3

JANHCA2N6794 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:DIE-3Reach Compliance Code:compliant
HTS代码:8541.21.00.40风险等级:5.38
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):1.5 A最大漏极电流 (ID):1.5 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-XUUC-N3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:UNCASED CHIP
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):20 W认证状态:Qualified
参考标准:MIL-19500/555H子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

JANHCA2N6794 数据手册

 浏览型号JANHCA2N6794的Datasheet PDF文件第2页浏览型号JANHCA2N6794的Datasheet PDF文件第3页浏览型号JANHCA2N6794的Datasheet PDF文件第4页浏览型号JANHCA2N6794的Datasheet PDF文件第5页浏览型号JANHCA2N6794的Datasheet PDF文件第6页浏览型号JANHCA2N6794的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 1 June 2013.  
INCH-POUND  
MIL-PRF-19500/555L  
17 April 2013  
SUPERSEDING  
MIL-PRF-19500/555K  
11 February 2010  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,  
TYPES 2N6788, 2N6788U, 2N6790, 2N6790U, 2N6792, 2N6792U, 2N6794, AND 2N6794U,  
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode,  
MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in  
MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.  
1.2 Physical dimensions. See figures 1 (TO-205AF), 2 (LCC), and figures 3, 4, 5, 6, and 7 for JANHC and JANKC  
(die) dimensions.  
1.3 Maximum ratings. (Unless otherwise specified, TA = +25°C).  
PT  
VDS  
VDG  
VGS  
VDS and VDG  
70,000 ft. altitude  
Type  
TA = +25°C  
W
V dc  
V dc  
V dc  
2N6788, 2N6788U  
2N6790, 2N6790U  
2N6792, 2N6792U  
2N6794, 2N6794U  
0.8  
0.8  
0.8  
0.8  
100  
200  
400  
500  
100  
200  
400  
500  
±20  
±20  
±20  
±20  
300  
300  
PT (1)  
TC = +25°C  
ID1 (3) (4)  
TC = +25°C  
ID2  
IS  
IDM  
(5)  
Rθ (2)  
JC  
Type  
TJ and TSTG  
TC = +100°C  
°C/W  
W
A dc  
A dc  
A dc  
A (pk)  
°C  
2N6788  
2N6790  
2N6792  
20  
20  
20  
20  
14  
14  
14  
14  
6.0  
3.5  
2.0  
1.5  
4.5  
2.8  
1.8  
1.4  
3.5  
2.25  
1.25  
1.0  
2.8  
1.8  
6.0  
3.5  
2.0  
1.5  
4.5  
2.8  
1.8  
1.4  
24  
14  
8
6.25  
6.25  
6.25  
6.25  
8.93  
8.93  
8.93  
8.93  
-55°  
to  
+150°  
2N6794  
6
2N6788U  
2N6790U  
2N6792U  
2N6794U  
18  
11  
7.2  
5.6  
1.13  
0.88  
See notes on next page.  
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,  
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact  
information can change, you may want to verify the currency of this address information using the ASSIST  
Online database at https://assist.dla.mil/.  
AMSC N/A  
FSC 5961  

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TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 11A I(D) | TO-204AA
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JANHCA2N6847 ETC

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TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 2.5A I(D) | TO-205AF
JANHCA2N6849 ETC

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TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6.5A I(D) | TO-205AF
JANHCA2N6851 ETC

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TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 4A I(D) | TO-205AF