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JANHCA2N6764

更新时间： 2024-11-02 23:59:59
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其他 - ETC 晶体晶体管开关脉冲
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25页 179K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 38A I(D) | TO-3

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JANHCA2N6764 数据手册

 浏览型号JANHCA2N6764的Datasheet PDF文件第2页浏览型号JANHCA2N6764的Datasheet PDF文件第3页浏览型号JANHCA2N6764的Datasheet PDF文件第4页浏览型号JANHCA2N6764的Datasheet PDF文件第5页浏览型号JANHCA2N6764的Datasheet PDF文件第6页浏览型号JANHCA2N6764的Datasheet PDF文件第7页 
INCH-POUND  
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 7 December 2001.  
MIL-PRF-19500/543F  
7 September 2001  
SUPERSEDING  
MIL-PRF-19500/543E  
5 August 1997  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON  
REPETITIVE AVALANCHE TYPES 2N6764, 2N6766, 2N6768, 2N6770,  
JAN, JANTX, JANTXV, JANS, JANHC and JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for N-channel, enhancement-mode,  
MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as  
specified in MIL-PRF-19500 and two levels of product assurance for each unencapsulated die, with avalanche  
energy ratings (E  
and E ) and maximum avalanche current (I ).  
AS  
AR AR  
1.2 Physical dimensions. See figure 1 (TO-204AE for types 2N6764 and 2N6766; TO-204AA for types 2N6768  
and 2N6770 (formerly TO-3)), see figures 2 and 3 for JANHC and JANKC (die) dimensions.  
1.3 Maximum ratings. (T = +25°C, unless otherwise specified).  
A
Type  
P
(1)  
P
V
V
V
I
(2)  
I
I
(2)  
T
T
DS  
DG  
GS  
D1  
S
D2  
T
= +25° C  
T
= +25° C  
T
= +25° C  
T = +100° C  
C
C
C
C
W
W
V dc  
V dc  
V dc  
A dc  
A dc  
A dc  
2N6764  
2N6766  
2N6768  
2N6770  
150  
150  
150  
150  
4
4
4
4
100  
200  
400  
500  
100  
200  
400  
500  
± 20  
± 20  
± 20  
± 20  
38.0  
30.0  
14.0  
12.0  
38.0  
30.0  
14.0  
12.0  
24.0  
19.0  
9.0  
7.75  
Type  
I
E
E
I
V
T
Max r  
(1);  
R
θ
JC  
max  
DM  
(3)  
AS  
AR  
AR  
ISO  
STG  
and  
DS(on)  
70,000  
ft.  
attitude  
V
= 10 V dc  
GS  
T
OP  
I
= I  
D2  
D
T = +25° C T = +150° C  
J
J
A pk  
A
Ω
Ω
°C/W  
mJ  
mJ  
°C  
-55  
to  
2N6764  
2N6766  
2N6768  
2N6770  
152  
120  
56  
150  
500  
700  
750  
0.055  
0.085  
0.300  
0.400  
0.105  
0.170  
0.750  
1.000  
0.83  
0.83  
0.83  
0.83  
15  
15  
15  
15  
38.0  
30.0  
14.0  
12.0  
400  
500  
+150  
48  
See notes on next page.  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in  
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,  
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement  
Proposal (DD Form 1426) appearing at the end of this document or by letter.  
AMSC/NA  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
FSC 5961  
1234567...25

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与JANHCA2N6764相关器件

型号 品牌 获取价格 描述 数据表
JANHCA2N6766 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 30A I(D) | TO-3
JANHCA2N6768 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 14A I(D) | TO-3
JANHCA2N6770 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 12A I(D) | TO-3
JANHCA2N6782 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 3.5A I(D) | TO-39
JANHCA2N6784 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 2.25A I(D) | TO-39
JANHCA2N6786 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 1.2A I(D) | TO-39
JANHCA2N6788 INFINEON

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 		Small Signal Field-Effect Transistor, 6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-
JANHCA2N6790 INFINEON

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 		Small Signal Field-Effect Transistor, 3.5A I(D), 200V, 1-Element, N-Channel, Silicon, Meta
JANHCA2N6792 INFINEON

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 		Small Signal Field-Effect Transistor, 2A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-
JANHCA2N6794 INFINEON

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 		Small Signal Field-Effect Transistor, 1.5A I(D), 500V, 1-Element, N-Channel, Silicon, Meta

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