Datasheet > JANHCA2N5153

JANHCA2N5153

更新时间： 2024-11-02 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
23页	136K
描述
TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 5A I(C) \| TO-39

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JANHCA2N5153 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 27 October 2001.

INCH-POUND

MIL-PRF-19500/545D

27 July 2001

SUPERSEDING

MIL-PRF-19500/545C

21 July 2000

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER

TYPES 2N5151, 2N5153, 2N5151L, 2N5153L, 2N5151U3, AND 2N5153U3

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP, silicon, power transistors for use in

high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated

device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated

device type.

1.2 Physical dimensions. See figure 1 (similar to T0-205), figures 2, 3, and 4 (JANHC and JANKC), and

figure 5 (U3).

1.3 Maximum ratings.

Types

Reverse

pulse (2)

energy

Safe

operating

area

stg

CBO

CEO

EBO

(1)

= +25°C

and T

V dc

A dc A dc

°C

2N5151, L

2N5153, L

1 (3)

11.8 (4)

100

5.5

See

figure 6

-65 to

+ 200

2N5151U3

2N5153U3

1.16 (5)

100 (6)

100

5.5

See

figure 6

-65 to

+ 200

(1) This value applies for Pw ≤ 8.3 ms, duty cycle ≤ 1 percent.

(2) This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy

test circuit of figure 7.

(3) Derate linearly 5.7 mW/°C for T_A> +25°C.

(4) Derate linearly 66.7 mW/°C for T_C> +25°C.

(5) Derate linearly 6.67 mW/°C for T_A> +25°C.

(6) Derate linearly 571 mW/°C for T_C> +25°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-

VAC, P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...23

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与JANHCA2N5153相关器件

型号	品牌	获取价格	描述	数据表
JANHCA2N5339	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 5A I(C) \| TO-39
JANHCA2N5415	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 200V V(BR)CEO \| 1A I(C) \| TO-39
JANHCA2N5416	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 300V V(BR)CEO \| 1A I(C) \| TO-39
JANHCA2N6756	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| TO-3
JANHCA2N6758	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 9A I(D) \| TO-3
JANHCA2N6760	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 5.5A I(D) \| TO-3
JANHCA2N6762	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 4.5A I(D) \| TO-3
JANHCA2N6764	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 38A I(D) \| TO-3
JANHCA2N6766	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 30A I(D) \| TO-3
JANHCA2N6768	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 14A I(D) \| TO-3

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