Datasheet > JANHCA2N6758

JANHCA2N6758

更新时间： 2024-11-02 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
22页	134K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 9A I(D) \| TO-3

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JANHCA2N6758 数据手册

The documentation and process conversion

measures necessary to comply with this

revision shall be completed by 20 August 1998

INCH-POUND

MIL-PRF-19500/542F

20 April 1998

SUPERSEDING

MIL-S-19500/542E

17 August 1994

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL,

SILICON TYPES 2N6756, 2N6758, 2N6760, 2N6762,

JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors.

Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of

product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figure 1 (TO-204AA; formerly TO-3), and figures 2, 3, for JANHC and JANKC die dimensions. See 6.5

for unencapsulated device types.

1.3 Maximum ratings. Unless otherwise specified, T = +25 C.

P 1/

Type

= +25 C

(free air)

= +25 C

A dc

= +100 C

A dc

V dc

2N6756

2N6758

2N6760

2N6762

100

200

400

500

100

200

400

500

14.0

9.0

5.5

4.5

9.0

6.0

3.5

3.0

T and T

Max r

(

DS on)

STG

ISO

Type

= 10 V dc, I = I

D D2

70,000 feet

altitude

max

T = 25 C

T = 150 C

A dc

A (pk)

ohms

C/W

2N6756

2N6758

2N6760

2N6762

14.0

9.0

5.5

4.5

-55 to +150

0.18

0.4

1.0

1.5

0.36

0.84

2.5

1.67

400

500

3.75

T_J_max− T_C

1/ Derate linearly 0.6 W/ C for T > +25 C.

P =

R_Θ

max

T_J

−

max

at T_J

x R_DS

(

)

(

)

3/ I

= 4 I ; I_D1as calculated in note 2.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH

43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or

by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...22

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与JANHCA2N6758相关器件

型号	品牌	获取价格	描述	数据表
JANHCA2N6760	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 5.5A I(D) \| TO-3
JANHCA2N6762	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 4.5A I(D) \| TO-3
JANHCA2N6764	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 38A I(D) \| TO-3
JANHCA2N6766	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 30A I(D) \| TO-3
JANHCA2N6768	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 14A I(D) \| TO-3
JANHCA2N6770	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 12A I(D) \| TO-3
JANHCA2N6782	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 3.5A I(D) \| TO-39
JANHCA2N6784	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 2.25A I(D) \| TO-39
JANHCA2N6786	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 1.2A I(D) \| TO-39
JANHCA2N6788	INFINEON	获取价格	Small Signal Field-Effect Transistor, 6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-

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