型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N7236U | MICROSEMI |
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Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Met | |
JAN2N7237 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 11A I(D) | TO-254AA | |
JAN2N7334 | MICROSEMI |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
JAN2N7335 | MICROSEMI |
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Small Signal Field-Effect Transistor, | |
JAN2N7368 | ETC |
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TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | TO-254 | |
JAN2N7369 | ETC |
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TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 10A I(C) | TO-254 | |
JAN2N7370 | MICROSEMI |
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NPN DARLINGTON HIGH POWER SILICON TRANSISTOR | |
JAN2N7371 | MICROSEMI |
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PNP DARLINGTON HIGH POWER SILICON TRANSISTOR | |
JAN2N7372 | MICROSEMI |
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Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-254AA, Metal, | |
JAN2N7373 | ETC |
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TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-254AA |