Datasheet > JAN2N7484

JAN2N7484

更新时间： 2024-11-29 09:47:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
22页	203K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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JAN2N7484 数据手册

INCH-POUND

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 21 August 2010.

MIL-PRF-19500/702C

21 May 2010

SUPERSEDING

MIL-PRF-19500/702B

30 May 2007

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED

(TOTAL DOSE AND SINGLE EVENT EFFECTS)

TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3,

JANTXVR, F, G, AND H AND JANSR, F, G, AND H

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for an N-Channel, enhancement-mode,

MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product

assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating

(E_AS) and maximum avalanche current (I_AS). See 6.5 for JANHC and JANKC die versions.

1.2 Physical dimensions. See figure 1, (TO-257AA, T3).

1.3 Maximum ratings. T_A= +25°C, unless otherwise specified.

Type

P_T(1)

T_C=

+25°C

P_T

T_A=

+25°C

V_DS

V_DG

V_GS

I_D1(3) (4) I_D2(3) (4)

I_S

I_DM(5)

A (pk)

T_J

and

T_STG

R _θJC(2)

T_C=

+100°C

T_C= +25°C

V dc

A dc

°C/W

°C

2N7482T3

2N7483T3

2N7484T3

1.56

±20

1.67

-55

+150

100

(1) Derate linearly 0.6 W/°C for T_C> +25°C.

(2) See figure 2, thermal impedance curves.

(3) The following formula derives the maximum theoretical I_Dspecs. I_Dis limited to 18A by package

and device construction.

T_JMT_C

( on ) at

T_JM

I_D

(

)

(

)

R_θJC

R_DS

(4) See figure 3, maximum drain current graph.

(5) I_DM= 4 X I_D1, as defined in note (3).

* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of

this address information using the ASSIST Online database at https://assist.daps.dla.mil/.

AMSC N/A

FSC 5961

12 3 4 5 6 7...22

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与JAN2N7484相关器件

型号	品牌	获取价格	描述	数据表
JAN2N918	MICROSEMI	获取价格	NPN LOW POWER SILICON TRANSISTOR
JAN2N918	MOTOROLA	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic
JAN2N918UB	MICROSEMI	获取价格	NPN LOW POWER SILICON TRANSISTOR
JAN2N930	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 30MA I(C) \| TO-18
JAN2N930UB	ETC	获取价格	BJT
JAN3890AR	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
JAN3891A	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 200V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
JAN3891AR	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 200V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
JAN3893A	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 400V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
JAN3893AR	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 400V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

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