型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N7370 | MICROSEMI |
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NPN DARLINGTON HIGH POWER SILICON TRANSISTOR | |
JAN2N7371 | MICROSEMI |
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PNP DARLINGTON HIGH POWER SILICON TRANSISTOR | |
JAN2N7372 | MICROSEMI |
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Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-254AA, Metal, | |
JAN2N7373 | ETC |
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TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-254AA | |
JAN2N7434 | INFINEON |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
JAN2N7484 | INFINEON |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
JAN2N918 | MICROSEMI |
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NPN LOW POWER SILICON TRANSISTOR | |
JAN2N918 | MOTOROLA |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic | |
JAN2N918UB | MICROSEMI |
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NPN LOW POWER SILICON TRANSISTOR | |
JAN2N930 | ETC |
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TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 30MA I(C) | TO-18 |