Datasheet > JAN3SM8

JAN3SM8

更新时间： 2024-11-07 06:12:15

品牌	Logo	应用领域
商升特 - SEMTECH		/
页数	文件大小	规格书
4页	156K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon,

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数据手册

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JAN3SM8 数据手册

1N5550 THRU 1N5554

3SM2 THRU 3SM0

Axial Leaded Hermetically Sealed

Standard Recovery Rectifier Diode

POWER DISCRETES

Description

Features

Quick reference data

Low reverse leakage current

Hermetically sealed in fused metal oxide

Good thermal shock resistance

Low forward voltage drop

V_R= 200 - 1000V

I_F

5.0A

t_rr= 2µS

V_F= 1.0V

Avalanche capability

These products are qualified to MIL-PRF-19500/420.

They can be supplied fully released as JAN, JANTX,

JANTXV, and JANS versions.

Absolute Maximum Ratings

Electrical specifications @ T_A= 25°C unless otherwise specified.

1N5550

1N5551

3SM4

1N5552

3SM6

1N5553

3SM8

1N5554

3SM0

Symbol

Units

3SM2

Working Reverse Voltage

V_RWM

200

400

600

800

1000

Average Forward Current

@ 55°C in free air, lead length

0.375"

I_F(AV)

5.0

Repetitive Surge Current

@ 55°C in free air, lead length

0.375"

I_FRM

Non-Repetitive Surge Current

(tp = 8.3mS @ V_R& T_JMAX

)

I_FSM

100

150

(tp = 8.3mS, @ V_R& 25°C)

Storage Temperature Range

T_STG

-65 to +175

°C

Revision: September 22, 2008

www.semtech.com

12 3 4

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