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JAN2N930UB

更新时间： 2024-11-05 23:59:59
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17页 96K
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JAN2N930UB 数据手册

 浏览型号JAN2N930UB的Datasheet PDF文件第2页浏览型号JAN2N930UB的Datasheet PDF文件第3页浏览型号JAN2N930UB的Datasheet PDF文件第4页浏览型号JAN2N930UB的Datasheet PDF文件第5页浏览型号JAN2N930UB的Datasheet PDF文件第6页浏览型号JAN2N930UB的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 25 June 2002.  
INCH-POUND  
MIL-PRF-19500/253H  
25 March 2002  
SUPERSEDING  
MIL-PRF-19500/253G  
23 April 2001  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER  
TYPES 2N930 AND 2N930UB JAN, JANTX, JANTXV, JANS, JANHC AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for NPN silicon, low-power transistors. Four  
levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product  
assurance are provided for die.  
1.2 Physical dimensions. See figure 1 (TO-18), figure 2 (UB, surface mount), and figures 3 and 4 (die).  
* 1.3 Maximum ratings. Unless otherwise specified, T = +25°C.  
C
P
(1)  
V
V
V
I
T and T  
J STG  
T
CBO  
CEO  
EBO  
C
R
R
qJA  
qJC  
T
= +25°C  
A
mW  
360  
V dc  
60  
V dc  
45  
V dc  
6
mA dc  
30  
°C  
°C/W  
°C/W  
-65 to +200  
97  
485  
(1) Derate linearly at 2.06 mW/°C above T = +25°C.  
A
1.4 Primary electrical characteristics.  
h
(1)  
h
(1)  
C
|h  
|
V
(1)  
V
(1)  
FE1  
FE2  
obo  
fe  
BE(SAT)  
CE(SAT)  
Limits  
V
= 5 V dc  
V
C
= 5 V dc  
V
= 5 V dc  
V
C
= 5 V dc  
I
= 10 mA dc  
I = 0.5 mA dc  
B
I
= 10 mA dc  
= 0.5 mA dc  
CE  
CE  
CB  
I
CE  
= 500 µA dc  
C
C
B
I
= 10 µA dc  
I
= 500 µA dc  
= 0  
I
I
C
E
f = 30 MHz  
100 kHz £ f £ 1 MHz  
pF  
V dc  
V dc  
1.0  
Min  
Max  
100  
300  
150  
1.5  
6.0  
0.6  
1.0  
8.0  
(1) Pulsed (see 4.5.1).  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in  
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC, Post  
Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD  
Form 1426) appearing at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
1234567...17

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与JAN2N930UB相关器件

型号 品牌 获取价格 描述 数据表
JAN3890AR MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
JAN3891A MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 20A, 200V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
JAN3891AR MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 20A, 200V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
JAN3893A MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 20A, 400V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
JAN3893AR MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 20A, 400V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
JAN3FF05 SEMTECH

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 		Rectifier Diode, 1 Phase, 1 Element, 1.3A, 50V V(RRM), Silicon, HERMETIC SEALED, G102, 2 P
JAN3FF10 SEMTECH

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 		Rectifier Diode, 1 Phase, 1 Element, 1.3A, 100V V(RRM), Silicon, HERMETIC SEALED, G102, 2
JAN3FF15 SEMTECH

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 		Rectifier Diode, 1 Phase, 1 Element, 1.3A, 150V V(RRM), Silicon, HERMETIC SEALED, G102, 2
JAN3SF05 SEMTECH

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 		Rectifier Diode, 1 Phase, 1 Element, 4.5A, 50V V(RRM), Silicon, HERMETIC SEALED, G4, 2 PIN
JAN3SF2 SEMTECH

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 		Rectifier Diode, 1 Phase, 1 Element, 4.5A, 200V V(RRM), Silicon, HERMETIC SEALED, G4, 2 PI

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