是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | TO-267AB |
包装说明: | SMALL OUTLINE, R-PDSO-N3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.21 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 500 mJ |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 18 A |
最大漏源导通电阻: | 0.22 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-267AB | JESD-30 代码: | R-PDSO-N3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 72 A |
认证状态: | Qualified | 参考标准: | MIL-19500/595 |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | NO LEAD | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
JANTXV2N7236U | INFINEON |
功能相似 |
POWER MOSFET SURFACE MOUNT (SMD-1) | |
IRFM9140 | INFINEON |
功能相似 |
POWER MOSFET THRU-HOLE (TO-254AA) | |
JANS2N7236 | INFINEON |
功能相似 |
POWER MOSFET THRU-HOLE (TO-254AA) |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N7237 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 11A I(D) | TO-254AA | |
JAN2N7334 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
JAN2N7335 | MICROSEMI |
获取价格 |
Small Signal Field-Effect Transistor, | |
JAN2N7368 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | TO-254 | |
JAN2N7369 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 10A I(C) | TO-254 | |
JAN2N7370 | MICROSEMI |
获取价格 |
NPN DARLINGTON HIGH POWER SILICON TRANSISTOR | |
JAN2N7371 | MICROSEMI |
获取价格 |
PNP DARLINGTON HIGH POWER SILICON TRANSISTOR | |
JAN2N7372 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-254AA, Metal, | |
JAN2N7373 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-254AA | |
JAN2N7434 | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |