Datasheet > JAN2N2484UB

JAN2N2484UB

更新时间： 2024-11-01 23:59:59

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其他 - ETC		/
页数	文件大小	规格书
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JAN2N2484UB 数据手册

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 15 May 2002.

INCH-POUND

MIL-PRF-19500/376F

15 February 2002

SUPERSEDING

MIL-PRF-19500/376E

31 August 2000

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER

TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four

levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product

assurance are provided for die.

1.2 Physical dimensions. See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and

UB), and figures 4 and 5 (die).

1.3 Maximum ratings.

Types

P_T(1)

V_CBO

V_EBO

V_CEO

I_C

T_Jand T_STG

R_θJA

T_A= +25°C

V dc

mA dc

°C

°C/W

2N2484

2N2484UA

2N2484UB

360

-65 to +200

325

(1) Derate linearly at 2.06 mW/°C above T_A= +25°C.

1.4 Primary electrical characteristics.

h_fe

C_obo

|h_fe|2

V_CE(sat)(1)

Limits

V_CE= 5 V dc

I_C= 1 mA dc

f = 1 kHz

I_E= 0

V_CB= 5 V dc

100 kHz ≤ f ≤ 1 MHz

I_C= 1.0 mA dc

I_B= 0.1 mA dc

I_C= 500 µA dc

V_CE= 5 V dc

f = 30 MHz

V dc

0.3

Min

Max

250

900

2.0

7.0

5.0

(1) Pulsed (see 4.5.1).

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,

P.O. Box 3990, Columbus, OH 43216-5000), by using the Standardization Document Improvement Proposal (DD

Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...19

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型号	品牌	获取价格	描述	数据表
JAN2N2553	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 3A I(C) \| STR-10
JAN2N2555	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| STR-10
JAN2N2557	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 3A I(C) \| IST-3RT-1/2
JAN2N2559	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| IST-3RT-1/2
JAN2N2604	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 30MA I(C) \| TO-46
JAN2N2604A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39,
JAN2N2604UB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMI
JAN2N2605	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-46,
JAN2N2605UB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMI
JAN2N2608	MICROSEMI	获取价格	P-CHANNEL J-FET