5秒后页面跳转
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| JAN2N2604 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 30MA I(C) | TO-46 |
|
| JAN2N2604A | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, |
|
| JAN2N2604UB | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMI |
|
| JAN2N2605 | RAYTHEON |
获取价格 |
Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-46, |
|
| JAN2N2605UB | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMI |
|
| JAN2N2608 | MICROSEMI |
获取价格 |
P-CHANNEL J-FET |
|
| JAN2N2608UB | MICROSEMI |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, SURFACE |
|
| JAN2N2609 | MICROSEMI |
获取价格 |
P-CHANNEL J-FET |
|
| JAN2N2708 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-72, |
|
| JAN2N2812 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | STR-1/4 |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
工作时间：9:00-21:00
CEO邮箱：ceo@jiepei.com
投诉邮箱：tousu@jiepei.com
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
