Datasheet > IXTR90P10P

IXTR90P10P

更新时间： 2024-01-19 17:19:18

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	151K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXTR90P10P 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

IXTR90P10P 数据手册

PolarP^TM

Power MOSFET

V_DSS= - 100V

I_D25= - 57A

IXTR90P10P

R_DS(on)

≤

27mΩ

P-Channel Enhancement Mode

Avalanche Rated

ISOPLUS247

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

- 100

V_DGR

Isolated Tab

V_GSS

V_GSM

Continuous

Transient

±20

±30

G = Gate

S = Source

= Drain

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

- 57

- 225

I_A

T_C= 25°C

- 90

2.5

E_AS

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

Features

190

^zSilicon Chip on Direct-Copper Bond

(DCB) Substrate

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

- UL Recognized Package

- Isolated Mounting Surface

- 2500V~ Electrical Isolation

^zAvalanche Rated

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

^zHigh Current Handling Capability

^zFast Intrinsic Diode

V_ISOL

M_d

50/60 H_Z, RMS t = 1min

Mounting Force

2500

20..120/4.5..27

N/lb.

^zThe Rugged PolarP^TMProcess

^zLow Q_G

Weight

^zLow Drain-to-Tab capacitance

^zLow Package Inductance

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

-100

- 2.0

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250μA

V_DS= V_GS, I_D= - 250μA

V_GS= ±20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

Applications

- 4.0

High-Side Switches

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

±100 nA

I_DSS

- 25 μA

T_J= 125°C

- 200 μA

Current Regulators

R_DS(on)

V_GS= -10V, I_D= - 45A, Note 1

27 mΩ

DS99985B(01/13)

12 3 4 5 6

中文翻译

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