Datasheet > IXTQ22N60P

IXTQ22N60P

更新时间： 2024-04-18 10:34:12

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	381K
描述
Polar?标准功率MOSFET经过专门定制，可为设计人员提供在性能和成本之间取得最佳平衡的器件解决方案。这些器件包含了Polar技术平台，以实现低导通电阻（Rdson）。 Polar标准MOS

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IXTQ22N60P 数据手册

IXTQ 22N60P IXTV 22N60P

IXTV 22N60PS

Symbol

g_fs

Test Conditions

Characteristic Values

TO-3P (IXTQ) Outline

(T_J= 25°C, unless otherwise specified)

Min. Typ. Max.

V_DS= 20 V; I_D= 0.5 I_D25, pulse test

V_GS= 0 V, V_DS= 25 V, f = 1 MHz

C_iss

C_oss

C_rss

3600

305

t_d(on)

t_r

t_d(off)

t_f

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= I_D25

R_G= 4 Ω (External)

Q_g(on)

Q_gs

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= 0.5 I_D25

Q_gd

R_thJC

R_thCS

0.31 ° C/W

° C/W

(TO-3P)

0.21

Source-Drain Diode

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ. Max.

Symbol

I_S

Test Conditions

V_GS= 0 V

Repetitive

I_SM

PLUS220 (IXTV) Outline

V_SD

I_F= I_S, V_GS= 0 V,

1.5

Pulse test, t ≤300 µs, duty cycle d≤ 2 %

I_F= 22A, -di/dt = 100 A/µs

V_R= 100V, V_GS= 0 V

t_rr

Q_RM

500

4.0

µC

PLUS220SMD (IXTV_S) Outline

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844

one or moreof the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405B2 6,759,692

6,710,463 6,771,478 B2

123 4 5 6

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