是否Rohs认证: | 符合 | 生命周期: | Transferred |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 8.53 | 峰值回流温度(摄氏度): | NOT SPECIFIED |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH12N70X2 | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTH12N80 | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH12N90 | IXYS |
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MegaMOS FET | |
IXTH12N95 | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH12P25 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 12A I(D) | TO-218VAR | |
IXTH130N10T | IXYS |
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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated | |
IXTH130N10T | LITTELFUSE |
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沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低 | |
IXTH130N15T | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTH130N15T | IXYS |
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Power Field-Effect Transistor, 130A I(D), 150V, 0.012ohm, 1-Element, N-Channel, Silicon, M | |
IXTH130N15X4 | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, |