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IXTH140P10T PDF预览

IXTH140P10T

更新时间: 2024-11-06 14:56:31
品牌 Logo 应用领域
力特 - LITTELFUSE 开关驱动高压
页数 文件大小 规格书
7页 201K
描述
Trench P通道MOSFET非常适合“高压侧”开关应用,这些应用可采用简单的接地参考驱动电路,避免使用N通道MOSFET通常涉及的额外“高压侧”驱动电路。 这让设计人员可以减少元件数量,从而简

IXTH140P10T 数据手册

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TrenchPTM  
Power MOSFETs  
VDSS = -100V  
ID25 = -140A  
IXTT140P10T  
IXTH140P10T  
RDS(on)  
10mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-268 (IXTT)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-247 (IXTH)  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
-100  
-100  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±15  
±25  
V
V
G
D
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
-140  
A
A
D (Tab)  
- 400  
IA  
TC = 25°C  
TC = 25°C  
-140  
2.5  
A
J
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
10  
V/ns  
W
568  
Features  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
z
International Standard Packages  
Avalanche Rated  
Extended FBSOA  
Fast Intrinsic Diode  
Low RDS(ON) and QG  
z
z
z
z
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-268  
TO-247  
4
6
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ±15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
-100  
V
V
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
Current Regulators  
Battery Charger Applications  
z
- 2.0  
- 4.0  
z
z
±100 nA  
z
IDSS  
- 10 μA  
-150 μA  
z
TJ = 125°C  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
10 mΩ  
DS100371B(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  

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