Datasheet > IXTH13N110

IXTH13N110

更新时间： 2024-11-21 14:56:11

品牌	Logo	应用领域
力特 - LITTELFUSE		开关高压脉冲电源开关调节器
页数	文件大小	规格书
3页	226K
描述
高压系列N通道标准MOSFET适用于多种多样的电源开关系统，包括高压电源、电容放电电路、脉冲电路和电流调节器。功能与特色: 应用: 优点:

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中文翻译

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数据手册

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IXTH13N110 数据手册

IXTH 13N110 V_DSS= 1100 V

MegaMOS^TMFET

I_D25

= 13 A

R_DS(on)= 0.92 Ω

N-ChannelEnhancementMode

Symbol

Test Conditions

MaximumRatings

TO-247 AD

V_DSS

V_DGR

T_J= 25°C to 150°C

1100

T_J= 25°C to 150°C; R_GS= 1 MΩ

V_GS

Continuous

Transient

±20

±30

D(TAB)

V_GSM

I_D25

I_DM

T_C= 25°C

G = Gate,

S = Source,

D = Drain,

TAB = Drain

T_C= 25°C, pulse width limited by T_JM

P_D

T_C= 25°C

360

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

M_d

Mountingtorque

1.13/10 Nm/lb.in.

Weight

Maximumleadtemperatureforsoldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Features

Internationalstandardpackage

JEDEC TO-247 AD

Low R_{DS (on)}HDMOS^TMprocess

Rugged polysilicon gate cell structure

Fast switching times

Applications

Symbol

Test Conditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Switch-modeandresonant-mode

powersupplies

Motorcontrols

UninterruptiblePowerSupplies(UPS)

DC choppers

V_DSS

V_GS= 0 V, I_D= 3 mA

1100

V_GS(th)

V_DS= V_GS, I_D= 250 µA

4.5

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100 nA

500 µA

Advantages

V_DS= 0.8 • V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Easy to mount with 1 screw

(isolated mounting screw hole)

Space savings

R_DS(on)

V_GS= 10 V, I_D= 0.5 • I_D25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

0.80

0.92

Ω

Highpowerdensity

IXYS reserves the right to change limits, test conditions, and dimensions.

92781F (3/98)

1 - 2

12 3

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