5秒后页面跳转
IXTH130N15X4 PDF预览

IXTH130N15X4

更新时间: 2024-11-05 20:03:39
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
7页 293K
描述
Power Field-Effect Transistor,

IXTH130N15X4 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.35
Base Number Matches:1

IXTH130N15X4 数据手册

 浏览型号IXTH130N15X4的Datasheet PDF文件第2页浏览型号IXTH130N15X4的Datasheet PDF文件第3页浏览型号IXTH130N15X4的Datasheet PDF文件第4页浏览型号IXTH130N15X4的Datasheet PDF文件第5页浏览型号IXTH130N15X4的Datasheet PDF文件第6页浏览型号IXTH130N15X4的Datasheet PDF文件第7页 
Advance Technical Information  
X4-Class  
VDSS = 150V  
ID25 = 130A  
RDS(on) 8.5m  
IXTP130N15X4  
IXTH130N15X4  
Power MOSFETTM  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-220 (IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
TJ = 25C to 150C  
150  
150  
V
V
S
D (Tab)  
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
TO-247 (IXTH)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
130  
240  
A
A
G
D
D (Tab)  
IA  
TC = 25C  
TC = 25C  
65  
A
S
EAS  
800  
mJ  
G = Gate  
S = Source  
D
= Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
10  
V/ns  
W
Tab = Drain  
400  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
Md  
Mounting Torque  
1.13 / 10  
Nm/lb.in  
Low Package Inductance  
Weight  
TO-220  
TO-247  
3
6
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
150  
V
V
Applications  
2.5  
4.5  
Switch-Mode and Resonant-Mode  
100 nA  
A  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
IDSS  
5
TJ = 125C  
200 A  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
7.0  
8.5 m  
DS100893A(4/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  

与IXTH130N15X4相关器件

型号 品牌 获取价格 描述 数据表
IXTH130N20T IXYS

获取价格

N-Channel Enhancement Mode Avalanche Rated
IXTH130N20T LITTELFUSE

获取价格

沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低
IXTH13N110 IXYS

获取价格

MEGA MOS FET
IXTH13N110 LITTELFUSE

获取价格

高压系列N通道标准MOSFET适用于多种多样的电源开关系统,包括高压电源、电容放电电路、脉
IXTH13N65 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 13A I(D) | TO-218VAR
IXTH13N80 IXYS

获取价格

MegaMOSFET
IXTH13N80 LITTELFUSE

获取价格

高压系列N通道标准MOSFET适用于多种多样的电源开关系统,包括高压电源、电容放电电路、脉
IXTH13N90 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 13A I(D) | TO-218VAR
IXTH13P15 IXYS

获取价格

Transistor,
IXTH13P20 IXYS

获取价格

Transistor,