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IXTH130N15T PDF预览

IXTH130N15T

更新时间: 2024-11-06 20:57:55
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
5页 149K
描述
Power Field-Effect Transistor, 130A I(D), 150V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

IXTH130N15T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-247AD
包装说明:TO-247AD, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.72其他特性:AVALANCHE RATED
雪崩能效等级(Eas):1200 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (ID):130 A最大漏源导通电阻:0.012 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):330 A
认证状态:Not Qualified表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTH130N15T 数据手册

 浏览型号IXTH130N15T的Datasheet PDF文件第2页浏览型号IXTH130N15T的Datasheet PDF文件第3页浏览型号IXTH130N15T的Datasheet PDF文件第4页浏览型号IXTH130N15T的Datasheet PDF文件第5页 
Preliminary Technical Information  
TrenchHVTM  
Power MOSFET  
IXTH130N15T  
IXTQ130N15T  
VDSS = 150  
ID25 = 130  
RDS(on) 12 mΩ  
V
A
N-ChannelEnhancementMode  
AvalancheRated  
TO-247 (IXTH)  
Symbol  
TestConditions  
Maximum Ratings  
G
(TAB)  
D
S
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
150  
150  
V
V
VGSM  
Transient  
± 30  
V
TO-3P(IXTQ)  
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
130  
75  
330  
A
A
A
IAR  
EAS  
TC = 25°C  
TC = 25°C  
5
1.2  
A
J
G
D
S
(TAB)  
dv/dt  
PD  
IS IDM, di/dt 100 A/ms, VDD VDSS  
TJ 175°C, RG = 2.5 Ω  
3
V/ns  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TC = 25°C  
750  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Features  
z Unclamped Inductive Switching (UIS)  
rated  
Md  
Mounting torque  
1.13 / 10 Nm/lb.in.  
z Low package inductance  
- easy to drive and to protect  
z 175 °C Operating Temperature  
Weight  
TO-3P  
TO-247  
5.5  
6
g
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 1 mA  
VGS = ± 20 V, VDS = 0 V  
150  
V
V
2.5  
4.5  
± 200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
250  
μA  
μA  
TJ = 150°C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25, Notes 1, 2  
10  
12 mΩ  
DS99796 (02/07)  
© 2007 IXYS CORPORATION, All rights reserved  

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