HiPerFETTM Power MOSFETs
Single Die MOSFET
VDSS
ID25
RDS(on)
900V 25A
900V 26A
330mΩ
300mΩ
IXFN25N90
IXFN26N90
N-Channel Enhancement Mode
Avalanche Rated,High dv/dt, Low trr
Fast Intrinsic Diode
miniBLOC, SOT-227
E153432
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
900
V
V
V
V
S
G
VDGR
VGSS
VGSM
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
900
± 20
± 30
Transient
ID25
IDM
ID25
IDM
TC = 25°C
25N90
25
100
26
A
A
A
A
S
TC = 25°C, pulse width limited by TJM
TC = 25°C
25N90
26N90
26N90
D
G = Gate
S = Source
D = Drain
TC = 25°C, pulse width limited by TJM
104
IAR
IAR
EAR
EAS
TC = 25°C
TC = 25°C
TC = 25°C
TC = 25°C
25N90
26N90
25
26
64
3
A
A
mJ
J
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
5
V/ns
W
Features
600
z International standard package
z miniBLOC, with Aluminium nitride
isolation
TJ
-55 ... +150
150
°C
°C
°C
°C
TJM
Tstg
TL
-55 ... +150
300
z Low RDS(ON) HDMOSTM process
z Avalanche Rated
1.6mm (0.062 in.) from case for 10s
z Low package inductance
z Fast intrinsic diode
VISOL
50/60 Hz, RMS
t = 1min
t = 1s
2500
3000
V~
V~
IISOL ≤ 1mA
Advantages
Md
Mounting torque
Terminal connection torque
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
z Low gate drive requirement
z High power density
Weight
30
g
Applications:
Symbol
Test Conditions
Characteristic Values
z Switched-mode and resonant-mode
power supplies
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
z DC-DC Converters
z Battery chargers
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ± 20V, VDS = 0V
900
3.0
V
z DC choppers
5.0
V
z Temperature & lighting controls
± 200 nA
IDSS
VDS = 0.8 • VDSS
VGS = 0V
100 μA
2 mA
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
25N90
26N90
330 mΩ
300 mΩ
DS97526F(12/08)
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