Datasheet > IXFN26N90

IXFN26N90

更新时间： 2023-12-06 20:13:17

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	193K
描述
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数据手册

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IXFN26N90 数据手册

IXFN25N90

IXFN26N90

Symbol

Test Conditions

Characteristic Values

SOT-227B Outline

(T_J= 25°C unless otherwise specified)

Min.

Typ.

Max.

g_fs

V_DS= 10V, I_D= 0.5 • I_DSS, Note 1

C_iss

C_oss

C_rss

8.7

800

300

10.8

V_GS= 0V, V_DS= 25V, f = 1MHz

1000

375

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_DSS

R_G= 1Ω (External)

130

Q_g(on)

Q_gs

240

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_DSS

Q_gd

107

R_thJC

R_thCS

0.21 °C/W

°C/W

0.05

Source-Drain Diode

Characteristic Values

T_J= 25°C unless otherwise specified)

Min.

Typ.

Max.

I_S

V_GS= 0V

25N90

26N90

I_SM

Repetitive, pulse width limited by T_JM25N90

26N90

100

104

V_SD

I_F= I_S, V_GS= 0V, Note 1

1.5

t_rr

250 ns

I_F= I_S, -di/dt = 100A/μs

Q_RM

I_RM

1.4

μC

V_R= 100V

Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,727,585

7,005,734 B2 7,157,338B2

7,063,975 B2

6,534,343

6,583,505

6,710,405 B2 6,759,692

6,710,463

6,771,478 B2 7,071,537

123 4 5

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