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IXFN30N120P PDF预览

IXFN30N120P

更新时间: 2024-11-19 14:56:47
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 157K
描述
功能与特色: 优点: 应用:

IXFN30N120P 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:FLANGE MOUNT, R-PUFM-X4Reach Compliance Code:compliant
风险等级:5.76Is Samacsys:N
其他特性:UL RECOGNIZED, AVALANCHE RATED雪崩能效等级(Eas):2000 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:1200 V最大漏极电流 (Abs) (ID):30 A
最大漏极电流 (ID):30 A最大漏源导通电阻:0.35 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PUFM-X4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):890 W
最大脉冲漏极电流 (IDM):75 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Nickel (Ni)端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFN30N120P 数据手册

 浏览型号IXFN30N120P的Datasheet PDF文件第2页浏览型号IXFN30N120P的Datasheet PDF文件第3页浏览型号IXFN30N120P的Datasheet PDF文件第4页浏览型号IXFN30N120P的Datasheet PDF文件第5页 
PolarTM HiperFETTM  
Power MOSFET  
VDSS = 1200V  
ID25 = 30A  
IXFN30N120P  
RDS(on) 350m  
D
S
trr  
300ns  
G
S
N-Channel Enhancement Mode  
Fast Intrinsic Rectifier  
miniBLOC  
E153432  
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
1200  
1200  
V
V
VDGR  
S
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
D
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
30  
75  
A
A
G = Gate  
S = Source  
D = Drain  
IA  
EAS  
TC = 25C  
TC = 25C  
15  
2
A
J
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
(Gate Return) Terminal.  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
20  
V/ns  
W
890  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Features  
International Standard Package  
Low Intrinsic Gate Resistance  
miniBLOC with Aluminum Nitride  
Isolation  
VISOL  
50/60 Hz, RMS, t = 1minute  
2500  
3000  
V~  
V~  
IISOL 1mA,  
t = 1s  
Md  
Mounting Torque for Base Plate  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in  
Nm/Ib.in  
Low Package Inductance  
Fast Intrinsic Rectifier  
Low RDS(on) and QG  
Weight  
30  
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
1200  
3.5  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 1mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
6.5  
300 nA  
Power Supplies  
AC Motor Control  
High Speed Power Switching  
IDSS  
50 A  
5 mA  
TJ = 125C  
Appliccation  
RDS(on)  
VGS = 10V, ID = 15A, Note 1  
350 m  
DS99884B(8/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  

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