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IXFH220N06T3 PDF预览

IXFH220N06T3

更新时间: 2024-01-05 01:04:57
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
7页 248K
描述
Power Field-Effect Transistor,

IXFH220N06T3 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.75
Base Number Matches:1

IXFH220N06T3 数据手册

 浏览型号IXFH220N06T3的Datasheet PDF文件第1页浏览型号IXFH220N06T3的Datasheet PDF文件第3页浏览型号IXFH220N06T3的Datasheet PDF文件第4页浏览型号IXFH220N06T3的Datasheet PDF文件第5页浏览型号IXFH220N06T3的Datasheet PDF文件第6页浏览型号IXFH220N06T3的Datasheet PDF文件第7页 
IXFA220N06T3 IXFP220N06T3  
IXFH220N06T3  
Characteristic Values  
Min. Typ. Max.  
Symbol  
Test Conditions  
(TJ = 25C, Unless Otherwise Specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
87  
145  
S
Ciss  
Coss  
Crss  
8500  
970  
50  
pF  
pF  
pF  
RGi  
Gate Input Resistance  
1.7  
td(on)  
tr  
td(off)  
tf  
24  
20  
46  
17  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 5(External)  
Qg(on)  
Qgs  
136  
44  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
30  
RthJC  
RthCS  
0.34 C/W  
TO-220  
TO-247  
0.50  
0.21  
C/W  
C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
220  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
IF = 110A, VGS = 0V  
880  
1.4  
trr  
38  
1.9  
37  
ns  
A
-di/dt = 100A/s  
VR = 40V  
IRM  
QRM  
nC  
Notes: 1. Pulse test, t 300s, duty cycle, d  2%.  
2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm  
or less from the package body.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  

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