IXFH12N90Q

更新时间： 2024-01-29 16:15:26

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	58K
描述
HiPerFET Power MOSFETs Q Class

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中文翻译

获取价格

数据手册

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IXFH12N90Q 数据手册

IXFH 12N90Q

IXFT 12N90Q

Symbol

g_fs

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

TO-247 AD (IXFH) Outline

V_DS= 10 V; I_D= 0.5 • I_D25, pulse test

C_iss

C_oss

C_rss

2900

315

V_GS= 0 V, V_DS= 25 V, f = 1 MHz

t_d(on)

t_r

t_d(off)

t_f

V_GS= 10 V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

R_G= 2 W (External),

Q_g(on)

Q_gs

Dim. Millimeter

Inches

Min. Max. Min. Max.

V_GS= 10 V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

19.81 20.32 0.780 0.800

20.80 21.46 0.819 0.845

Q_gd

15.75 16.26 0.610 0.640

3.55 3.65 0.140 0.144

R_thJC

R_thCK

0.42

K/W

4.32 5.49 0.170 0.216

(TO-247)

0.25

5.4

6.2 0.212 0.244

1.65 2.13 0.065 0.084

4.5

0.177

1.0

1.4 0.040 0.055

Source-DrainDiode

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

10.8 11.0 0.426 0.433

4.7

0.4

5.3 0.185 0.209

0.8 0.016 0.031

Symbol

I_S

TestConditions

1.5 2.49 0.087 0.102

V_GS= 0 V

I_SM

Repetitive; pulse width limited by T_JM

V_SD

I_F= I_S, V_GS= 0 V,

1.3

Pulse test, t £ 300 ms, duty cycle d £ 2 %

t_rr

Q_RM

I_RM

200

0.6

I_F= I_S, -di/dt = 100 A/ms, V_R= 100 V

TO-268AA (D³PAK)

Dim.

Millimeter

Min. Max.

Inches

Min. Max.

Min. Recommended Footprint

A₁

A₂

4.9

2.7

.02

5.1

2.9

.25

.193 .201

.106 .114

.001 .010

b₂

1.15

1.9

1.45

2.1

.65

.045 .057

.75

.83

.016 .026

E₁

13.80 14.00

15.85 16.05

.543 .551

.624 .632

.524 .535

13.3

5.45 BSC

18.70 19.10

13.6

.215 BSC

.736 .752

.094 .106

2.40

2.70

1.20

1.00

0.25 BSC

1.40

1.15

.047 .055

.039 .045

.010 BSC

3.80

4.10

.150 .161

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

2 - 2

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715

5,381,025

中文翻译

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