5秒后页面跳转
IXFH140N10P PDF预览

IXFH140N10P

更新时间: 2024-11-03 14:56:51
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 245K
描述
功能与特色: 优点: 应用:

IXFH140N10P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.75Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):2500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):140 A
最大漏源导通电阻:0.011 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):300 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFH140N10P 数据手册

 浏览型号IXFH140N10P的Datasheet PDF文件第2页浏览型号IXFH140N10P的Datasheet PDF文件第3页浏览型号IXFH140N10P的Datasheet PDF文件第4页浏览型号IXFH140N10P的Datasheet PDF文件第5页浏览型号IXFH140N10P的Datasheet PDF文件第6页 
PolarHVTM HiPerFET  
Power MOSFETs  
IXFH 140N10P  
IXFT 140N10P  
VDSS  
ID25  
RDS(on)  
= 100 V  
= 140 A  
11 mΩ  
150 ns  
N-Channel Enhancement Mode  
Fast Intrinsic Diode  
trr  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247 (IXFH)  
VDSS  
VDGR  
TJ = 25° C to 175° C  
TJ = 25° C to 175° C; RGS = 1 MΩ  
100  
100  
V
V
VGS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D (TAB)  
D
S
ID25  
TC =25° C  
140  
75  
A
A
A
ID(RMS)  
IDM  
External lead current limit  
TC = 25° C, pulse width limited by TJM  
300  
TO-268 (IXFT)  
IAR  
TC =25° C  
60  
A
EAR  
EAS  
TC =25° C  
TC =25° C  
80  
mJ  
J
2.5  
G
S
D (TAB)  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 4 Ω  
,
10  
V/ns  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TC =25° C  
600  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +150  
°C  
°C  
°C  
Features  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10s  
300  
260  
°C  
°C  
l
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
l
Md  
Mounting torque  
(TO-247)  
1.13/10 Nm/lb.in.  
Weight  
TO-247  
TO-268  
6.0  
5.0  
g
g
l
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
l
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
Easy to mount  
l
Space savings  
High power density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4.0 mA  
VGS = 20 VDC, VDS = 0  
100  
V
V
l
3.0  
5.0  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
500  
µA  
µA  
TJ = 175° C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
VGS = 15 V, ID = 300 A  
Note 1  
11 mΩ  
mΩ  
9
DS99213E(01/06)  
© 2006 IXYS All rights reserved  

与IXFH140N10P相关器件

型号 品牌 获取价格 描述 数据表
IXFH140N20X3 IXYS

获取价格

Power Field-Effect Transistor,
IXFH140N20X3 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXFH14N100 IXYS

获取价格

HiPerFET Power MOSFETs
IXFH14N100Q2 IXYS

获取价格

N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
IXFH14N100Q2 LITTELFUSE

获取价格

功能与特色: 应用: 优点:
IXFH14N100Q2_08 IXYS

获取价格

HiPerFET Power MOSFETs Q2-Class
IXFH14N60 IXYS

获取价格

HIPERFET Power MOSFTETs
IXFH14N60P IXYS

获取价格

PolarHV HiperFET Power MOSFET
IXFH14N60P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFH14N60P3 IXYS

获取价格

Power Field-Effect Transistor, 14A I(D), 600V, 0.54ohm, 1-Element, N-Channel, Silicon, Met